TY - JOUR
T1 - Low Noise Balanced-CMOS on Si(110) surface for Analog/Digital Mixed Signal Circuits
AU - Teramoto, A.
AU - Hamada, T.
AU - Akahori, H.
AU - Nii, K.
AU - Suwa, T.
AU - Kotani, K.
AU - Hirayama, M.
AU - Sugawa, S.
AU - Ohmi, T.
PY - 2003
Y1 - 2003
N2 - This paper demonstrated the CMOS characteristics on Si(110) surface by using surface flattening process and radical oxidation. By forming a MOS device on Si(110) surface, the high-speed and low 1/f noise p-MOSFET can be realized. Furthermore, the current drivability of p-MOS and n-MOS has balanced in the CMOS (balanced CMOS) on Si(110) surface can be also realized. These are very useful to the analog/digital mixed signal circuits.
AB - This paper demonstrated the CMOS characteristics on Si(110) surface by using surface flattening process and radical oxidation. By forming a MOS device on Si(110) surface, the high-speed and low 1/f noise p-MOSFET can be realized. Furthermore, the current drivability of p-MOS and n-MOS has balanced in the CMOS (balanced CMOS) on Si(110) surface can be also realized. These are very useful to the analog/digital mixed signal circuits.
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M3 - Conference article
AN - SCOPUS:0842331297
SN - 0163-1918
SP - 801
EP - 804
JO - Technical Digest - International Electron Devices Meeting
JF - Technical Digest - International Electron Devices Meeting
T2 - IEEE International Electron Devices Meeting
Y2 - 8 December 2003 through 10 December 2003
ER -