TY - JOUR
T1 - Low optical turn-on voltage in solution processed hybrid light emitting transistor
AU - Ablat, Abduleziz
AU - Kyndiah, Adrica
AU - Bachelet, Alexandre
AU - Takimiya, Kazuo
AU - Hirsch, Lionel
AU - Fasquel, Sophie
AU - Abbas, Mamatimin
N1 - Funding Information:
This project was supported by Aquitaine regional Grant “SMOLED” (No. 2014-1R60306). A. Ablat gratefully acknowledges the financial support of the National Natural Science Foundation of China (Grant Nos. 61604126 and 61464010) and China Scholarship Council (CSC). The authors thank bilateral program (FINE) between France and Japan supported by CNRS and JSPS.
Funding Information:
This project was supported by Aquitaine regional Grant "SMOLED" (No. 2014-1R60306). A. Ablat gratefully acknowledges the financial support of the National Natural Science Foundation of China (Grant Nos. 61604126 and 61464010) and China Scholarship Council (CSC). The authors thank bilateral program (FINE) between France and Japan supported by CNRS and JSPS.
Publisher Copyright:
© 2019 Author(s).
PY - 2019/7/8
Y1 - 2019/7/8
N2 - Low optical turn-on voltage is realized in a solution processed hybrid light emitting transistor (LET). To achieve that, an original approach has been applied where an emissive polymer is mixed with a hole transport small molecule. While the high mobility solution processed oxide determines the main electrical characteristics of the transistor as the electron transport layer, the hole transport molecule acts as an immediate source of positive charges to the emissive polymer within its matrix, thus resulting in more efficient light emission when the transistor is turned-on electrically. While the electrical turn-on voltage remains almost the same, the light turn-on voltage significantly decreases from 27 V in the control device to 2 V in the blend device. Furthermore, brightness and external quantum efficiency are also considerably improved within the whole range of gate bias in the blend device, evidencing that our approach enhances overall optical performance of a solution processed hybrid LET.
AB - Low optical turn-on voltage is realized in a solution processed hybrid light emitting transistor (LET). To achieve that, an original approach has been applied where an emissive polymer is mixed with a hole transport small molecule. While the high mobility solution processed oxide determines the main electrical characteristics of the transistor as the electron transport layer, the hole transport molecule acts as an immediate source of positive charges to the emissive polymer within its matrix, thus resulting in more efficient light emission when the transistor is turned-on electrically. While the electrical turn-on voltage remains almost the same, the light turn-on voltage significantly decreases from 27 V in the control device to 2 V in the blend device. Furthermore, brightness and external quantum efficiency are also considerably improved within the whole range of gate bias in the blend device, evidencing that our approach enhances overall optical performance of a solution processed hybrid LET.
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U2 - 10.1063/1.5090220
DO - 10.1063/1.5090220
M3 - Article
AN - SCOPUS:85068742386
SN - 0003-6951
VL - 115
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 2
M1 - 023301
ER -