Low-power and high-sensitivity magnetoresistive random access memory sensing scheme with body-biased preamplifier

Takeaki Sugimura, Jun Deguchi, Hoon Choi, Takeshi Sakaguchi, Hyuckjae Oh, Takafumi Fukushima, Mitsumasa Koyanagi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


In this paper, we describe a new magnetoresistive random access memory (MRAM) sensing scheme with a body-biased preamplifier for low-power and high-sensitivity operation. The proposed new MRAM sense amplifier consists of a current sense preamplifier with a body biasing differential pair of a common-gate amplifier and a voltage sense amplifier. The preamplifier controls bitline voltage appropriately and amplifies the difference in bitline current as current-mode sense amplifier. The new sense amplifier enhances sensitivity, and the body-biased preamplifier enables low-voltage operation. To evaluate the proposed circuit, the modeling of magnetic tunnel junction (MTJ) resistance characteristics was performed with a VHDL-AMS description, and the proposed circuit was simulated with a mixed signal circuit simulator. From the simulation result, it is confirmed that the proposed sensing scheme results in a 1.57 times faster access time than a conventional scheme, and that the power of the sense amplifier is lower than that of the conventional amplifier at the same speed.

Original languageEnglish
Pages (from-to)3321-3325
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 B
Publication statusPublished - 2006 Apr 25


  • Body-biased control
  • Low power
  • MRAM
  • Sense amplifier

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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