TY - JOUR
T1 - Low-pressure metalorganic chemical vapor deposition of a Cu Ga Se 2/Cu Al Se 2 heterostructure
AU - Chichibu, Shigefusa
AU - Sudo, Ryo
AU - Yoshida, Nobuhide
AU - Harada, Yoshiyuki
AU - Uchida, Mei
AU - Matsumoto, Satoru
PY - 1994/3
Y1 - 1994/3
N2 - A single-heterostructure of CuGaSe2/CuAlSe2 chalcopyrite semiconductors was successfully grown epitaxially on a GaAs(001) substrate using a low-pressure metal organic chemical vapor deposition technique. The valence-band discontinuity for the CuGaSe2/CuAlSe2 heterointerface was estimated to be 0.8±0.1 eV by means of X-ray photoelectron spectroscopy. The CuGaSe2/CuAlSe2 structure was found to have the straddling-type heterointerface, and the band discontinuity was found to be distributed mainly in the valence band.
AB - A single-heterostructure of CuGaSe2/CuAlSe2 chalcopyrite semiconductors was successfully grown epitaxially on a GaAs(001) substrate using a low-pressure metal organic chemical vapor deposition technique. The valence-band discontinuity for the CuGaSe2/CuAlSe2 heterointerface was estimated to be 0.8±0.1 eV by means of X-ray photoelectron spectroscopy. The CuGaSe2/CuAlSe2 structure was found to have the straddling-type heterointerface, and the band discontinuity was found to be distributed mainly in the valence band.
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U2 - 10.1143/JJAP.33.L286
DO - 10.1143/JJAP.33.L286
M3 - Article
AN - SCOPUS:0028403123
SN - 0021-4922
VL - 33
SP - L286-L289
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 3
ER -