TY - GEN
T1 - Low resistive ALD TiN metal gate using TDMAT precursor for high performance MOSFET
AU - Hayashida, T.
AU - Endo, K.
AU - X. Liu, Y.
AU - Kamei, T.
AU - Matsukawa, T.
AU - Ouchi, S.
AU - Sakamoto, K.
AU - Tsukada, J.
AU - Ishikawa, Y.
AU - Yamauchi, H.
AU - Ogura, A.
AU - Masahara, M.
PY - 2010
Y1 - 2010
N2 - We have demonstrated the effect of the resistivity reduction of the ALD-TiN film using TDMAT precursor by modifying the NH3 process (both initial exposure and PDA processes). It was found that the resistivity of the ALD TiN was significantly reduced by extending tNH3 and increasing TPDA by 700°C. Moreover, by employing the NH3 PDA, an increase in TiN peak intensity was detected from Ti 2p by XPS analysis and Ti : N ratio of approximately 1:1 was achieved. As a result of the evaluation of the electrical characteristics of TiN-gate MOSFETs, superior performance was achieved in the case of ALD TiN.
AB - We have demonstrated the effect of the resistivity reduction of the ALD-TiN film using TDMAT precursor by modifying the NH3 process (both initial exposure and PDA processes). It was found that the resistivity of the ALD TiN was significantly reduced by extending tNH3 and increasing TPDA by 700°C. Moreover, by employing the NH3 PDA, an increase in TiN peak intensity was detected from Ti 2p by XPS analysis and Ti : N ratio of approximately 1:1 was achieved. As a result of the evaluation of the electrical characteristics of TiN-gate MOSFETs, superior performance was achieved in the case of ALD TiN.
UR - http://www.scopus.com/inward/record.url?scp=77957985200&partnerID=8YFLogxK
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U2 - 10.1109/SNW.2010.5562563
DO - 10.1109/SNW.2010.5562563
M3 - Conference contribution
AN - SCOPUS:77957985200
SN - 9781424477272
T3 - 2010 Silicon Nanoelectronics Workshop, SNW 2010
BT - 2010 Silicon Nanoelectronics Workshop, SNW 2010
T2 - 2010 15th Silicon Nanoelectronics Workshop, SNW 2010
Y2 - 13 June 2010 through 14 June 2010
ER -