Low-temperature (≥400°C) growth of InN by metalorganic vapor phase epitaxy using an NH3 decomposition catalyst

Akio Yamamoto; Kazuki Kodama; Naoteru Shigekawa; Takashi Matsuoka; Masaaki Kuzuhara

doi:10.7567/JJAP.55.05FD04

Low-temperature (≥400°C) growth of InN by metalorganic vapor phase epitaxy using an NH3 decomposition catalyst

Akio Yamamoto, Kazuki Kodama, Naoteru Shigekawa, Takashi Matsuoka, Masaaki Kuzuhara

Materials Design Division

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

In this paper, we report the metalorganic vapor phase epitaxial (MOVPE) growth of InN using a NiO-based pellet-type NH3 decomposition catalyst. The use of the catalyst significantly changes the growth behavior of InN, which is dependent on the growth temperature (T_g). Continuous InN films without the incorporation of metallic In and a cubic phase are grown at Tg = 400-480 °C. An InN film grown at T_g ≈ 450 °C has a full-width at half maximum (FWHM) of 376 arcsec in the X-ray rocking curve for InN(0002) reflection. At Tg; 500 °C, the deposition rate of InN rapidly decreases and the deposited films become discontinuous with large (ca. 1 μm) pyramidal grains of InN. Depositions are scarcely obtained at Tg; 600 °C. Such changes in the growth behavior of InN are governed by the NH3 decomposition.

Original language	English
Article number	05FD04
Journal	Japanese journal of applied physics
Volume	55
Issue number	5
DOIs	https://doi.org/10.7567/JJAP.55.05FD04
Publication status	Published - 2016 May

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.7567/JJAP.55.05FD04

Cite this

@article{22b3cf279fca499f8919e2eb4f594a06,

title = "Low-temperature (≥400°C) growth of InN by metalorganic vapor phase epitaxy using an NH3 decomposition catalyst",

abstract = "In this paper, we report the metalorganic vapor phase epitaxial (MOVPE) growth of InN using a NiO-based pellet-type NH3 decomposition catalyst. The use of the catalyst significantly changes the growth behavior of InN, which is dependent on the growth temperature (Tg). Continuous InN films without the incorporation of metallic In and a cubic phase are grown at Tg = 400-480 °C. An InN film grown at Tg ≈ 450 °C has a full-width at half maximum (FWHM) of 376 arcsec in the X-ray rocking curve for InN(0002) reflection. At Tg; 500 °C, the deposition rate of InN rapidly decreases and the deposited films become discontinuous with large (ca. 1 μm) pyramidal grains of InN. Depositions are scarcely obtained at Tg; 600 °C. Such changes in the growth behavior of InN are governed by the NH3 decomposition.",

author = "Akio Yamamoto and Kazuki Kodama and Naoteru Shigekawa and Takashi Matsuoka and Masaaki Kuzuhara",

note = "Publisher Copyright: {\textcopyright} 2016 The Japan Society of Applied Physics.",

year = "2016",

month = may,

doi = "10.7567/JJAP.55.05FD04",

language = "English",

volume = "55",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "5",

}

TY - JOUR

T1 - Low-temperature (≥400°C) growth of InN by metalorganic vapor phase epitaxy using an NH3 decomposition catalyst

AU - Yamamoto, Akio

AU - Kodama, Kazuki

AU - Shigekawa, Naoteru

AU - Matsuoka, Takashi

AU - Kuzuhara, Masaaki

PY - 2016/5

Y1 - 2016/5

N2 - In this paper, we report the metalorganic vapor phase epitaxial (MOVPE) growth of InN using a NiO-based pellet-type NH3 decomposition catalyst. The use of the catalyst significantly changes the growth behavior of InN, which is dependent on the growth temperature (Tg). Continuous InN films without the incorporation of metallic In and a cubic phase are grown at Tg = 400-480 °C. An InN film grown at Tg ≈ 450 °C has a full-width at half maximum (FWHM) of 376 arcsec in the X-ray rocking curve for InN(0002) reflection. At Tg; 500 °C, the deposition rate of InN rapidly decreases and the deposited films become discontinuous with large (ca. 1 μm) pyramidal grains of InN. Depositions are scarcely obtained at Tg; 600 °C. Such changes in the growth behavior of InN are governed by the NH3 decomposition.

AB - In this paper, we report the metalorganic vapor phase epitaxial (MOVPE) growth of InN using a NiO-based pellet-type NH3 decomposition catalyst. The use of the catalyst significantly changes the growth behavior of InN, which is dependent on the growth temperature (Tg). Continuous InN films without the incorporation of metallic In and a cubic phase are grown at Tg = 400-480 °C. An InN film grown at Tg ≈ 450 °C has a full-width at half maximum (FWHM) of 376 arcsec in the X-ray rocking curve for InN(0002) reflection. At Tg; 500 °C, the deposition rate of InN rapidly decreases and the deposited films become discontinuous with large (ca. 1 μm) pyramidal grains of InN. Depositions are scarcely obtained at Tg; 600 °C. Such changes in the growth behavior of InN are governed by the NH3 decomposition.

UR - http://www.scopus.com/inward/record.url?scp=84965010177&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84965010177&partnerID=8YFLogxK

U2 - 10.7567/JJAP.55.05FD04

DO - 10.7567/JJAP.55.05FD04

M3 - Article

AN - SCOPUS:84965010177

SN - 0021-4922

VL - 55

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 5

M1 - 05FD04

ER -

Low-temperature (≥400°C) growth of InN by metalorganic vapor phase epitaxy using an NH3 decomposition catalyst

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this