TY - GEN
T1 - Low-temperature and damage-free transition metal and magnetic material etching using a new metallic complex reaction
AU - Nozawa, Toshihisa
AU - Miyama, Ryo
AU - Kubota, Shinji
AU - Moyama, Kazuki
AU - Kubota, Tomihiro
AU - Samukawa, Seiji
PY - 2015
Y1 - 2015
N2 - A neutral beam etching process has been developed that achieves damage-free (chemically and physically) etching. Recently, it was found that transition metals could be etched using neutral beam etching through metallic complex reactions. In this process, a neutral beam is extracted from a plasma generation region into a reaction chamber. Complex reactant gases are injected into a reaction chamber which is screened from the plasma during neutral beam etching. In this paper, etching of Pt and CoFeB, candidate materials for MRAM structures by a neutral beam system is described. It was found that etch rate enhancement of Pt/CoFeB surfaces resulted from their exposure to a neutral beam from Ar/O2 plasma with simultaneous injection of EtOH/acetic acid into the reaction chamber. Etching damage was also evaluated and no magnetic hysteresis degradation has been observed. Neutral beam etching technology has the capability to make breakthrough for fabricating MRAM device.
AB - A neutral beam etching process has been developed that achieves damage-free (chemically and physically) etching. Recently, it was found that transition metals could be etched using neutral beam etching through metallic complex reactions. In this process, a neutral beam is extracted from a plasma generation region into a reaction chamber. Complex reactant gases are injected into a reaction chamber which is screened from the plasma during neutral beam etching. In this paper, etching of Pt and CoFeB, candidate materials for MRAM structures by a neutral beam system is described. It was found that etch rate enhancement of Pt/CoFeB surfaces resulted from their exposure to a neutral beam from Ar/O2 plasma with simultaneous injection of EtOH/acetic acid into the reaction chamber. Etching damage was also evaluated and no magnetic hysteresis degradation has been observed. Neutral beam etching technology has the capability to make breakthrough for fabricating MRAM device.
KW - Metallic Complex Reaction
KW - Neutral Beam Etching
KW - Transition metal Etching
UR - http://www.scopus.com/inward/record.url?scp=84931843762&partnerID=8YFLogxK
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U2 - 10.1117/12.2178327
DO - 10.1117/12.2178327
M3 - Conference contribution
AN - SCOPUS:84931843762
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Advanced Etch Technology for Nanopatterning IV
A2 - Lin, Qinghuang
A2 - Engelmann, Sebastian U.
PB - SPIE
T2 - SPIE Conference on Advanced Etch Technology for Nanopatterning IV
Y2 - 23 February 2015 through 25 February 2015
ER -