Low-temperature characteristics of ambipolar SiO2/Si/SiO 2 Hall-bar devices

Kei Takashina; Benjamin Gaillard; Yukinori Ono; Yoshiro Hirayama

doi:10.1143/JJAP.46.2596

Low-temperature characteristics of ambipolar SiO₂/Si/SiO ₂ Hall-bar devices

Kei Takashina, Benjamin Gaillard, Yukinori Ono, Yoshiro Hirayama

Center for Science and Innovation in Spintronics (CSIS)

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We present the basic low-temperature characteristics of SiO ₂/Si/SiO₂ Hall-bar devices, where each Hall-bar arm is split into p- and n-type Ohmic contacts made by selective area ion-implantation doping of boron and phosphorus, respectively. Magnetotransport measurements of a 22-nm-thick Si(001) quantum well show Shubnikov-de Haas oscillations of two-dimensional holes in addition to the electrons generated at both sides of the quantum well. We discuss applications for extracting the physical characteristics of this technologically vital material system.

Original language	English
Pages (from-to)	2596-2598
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.46.2596
Publication status	Published - 2007 Apr 24

Keywords

Ambipolar
Hall-bar
Magnetotransport
Mobility
Quantum Hall effect
Silicon
Silicon-on-insulator (SOI) electrons and holes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.46.2596

Cite this

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abstract = "We present the basic low-temperature characteristics of SiO 2/Si/SiO2 Hall-bar devices, where each Hall-bar arm is split into p- and n-type Ohmic contacts made by selective area ion-implantation doping of boron and phosphorus, respectively. Magnetotransport measurements of a 22-nm-thick Si(001) quantum well show Shubnikov-de Haas oscillations of two-dimensional holes in addition to the electrons generated at both sides of the quantum well. We discuss applications for extracting the physical characteristics of this technologically vital material system.",

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AU - Takashina, Kei

AU - Gaillard, Benjamin

AU - Ono, Yukinori

AU - Hirayama, Yoshiro

PY - 2007/4/24

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AB - We present the basic low-temperature characteristics of SiO 2/Si/SiO2 Hall-bar devices, where each Hall-bar arm is split into p- and n-type Ohmic contacts made by selective area ion-implantation doping of boron and phosphorus, respectively. Magnetotransport measurements of a 22-nm-thick Si(001) quantum well show Shubnikov-de Haas oscillations of two-dimensional holes in addition to the electrons generated at both sides of the quantum well. We discuss applications for extracting the physical characteristics of this technologically vital material system.

KW - Ambipolar

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KW - Magnetotransport

KW - Mobility

KW - Quantum Hall effect

KW - Silicon

KW - Silicon-on-insulator (SOI) electrons and holes

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