Low-Temperature Cleaning of HF-Passivated Si(111) Surface with VUV Light

Yuji Takakuwa, Masafumi Nogawa, Michio Niwano, Hitoshi Katakura, Satoshi Matsuyoshi, Hiroyuki Ishida, Nobuo Miyamoto, Hiroo Kato

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23 Citations (Scopus)


Photon-stimulated desorption (PSD) of H+ ions from the HF-passivated Si(111) surface, whichis terminated with hydrogen, has been studied using synchrotron radiation. Desorption of H+ ions due to Si-H bond breaking is observed at photon energies above 17 eV. A distinct dependence of the H+-PSD yield on the angle of incidence of a photon beam also is observed. It is found that the H+-PSDyield correlates well with the photoabsorbance. The present results suggest the feasibility of cleaning the HF-passivated Si(111) surface at low-temperature by means of irradiation of vacuum-ultraviolet (VUV) light.

Original languageEnglish
Pages (from-to)L1274-L1277
JournalJapanese Journal of Applied Physics
Issue number7 A
Publication statusPublished - 1989 Jul


  • HF passivation
  • Hydrogen ion
  • Low-temperature cleaning
  • PSD
  • Silicon surface
  • Synchrotron radiation
  • VUV light


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