Low-Temperature Cleaning of HF-Passivated Si(111) Surface with VUV Light

Yuji Takakuwa; Masafumi Nogawa; Michio Niwano; Hitoshi Katakura; Satoshi Matsuyoshi; Hiroyuki Ishida; Nobuo Miyamoto; Hiroo Kato

doi:10.1143/JJAP.28.L1274

Low-Temperature Cleaning of HF-Passivated Si(111) Surface with VUV Light

Yuji Takakuwa, Masafumi Nogawa, Michio Niwano, Hitoshi Katakura, Satoshi Matsuyoshi, Hiroyuki Ishida, Nobuo Miyamoto, Hiroo Kato

Micro System Integration Center (μSIC)

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

Photon-stimulated desorption (PSD) of H⁺ ions from the HF-passivated Si(111) surface, whichis terminated with hydrogen, has been studied using synchrotron radiation. Desorption of H⁺ ions due to Si-H bond breaking is observed at photon energies above 17 eV. A distinct dependence of the H⁺-PSD yield on the angle of incidence of a photon beam also is observed. It is found that the H⁺-PSDyield correlates well with the photoabsorbance. The present results suggest the feasibility of cleaning the HF-passivated Si(111) surface at low-temperature by means of irradiation of vacuum-ultraviolet (VUV) light.

Original language	English
Pages (from-to)	L1274-L1277
Journal	Japanese Journal of Applied Physics
Volume	28
Issue number	7 A
DOIs	https://doi.org/10.1143/JJAP.28.L1274
Publication status	Published - 1989 Jul

Keywords

HF passivation
Hydrogen ion
Low-temperature cleaning
PSD
Silicon surface
Synchrotron radiation
VUV light

Access to Document

10.1143/JJAP.28.L1274

Cite this

@article{abd1be6a3a5348c4b4da0997d11d863b,

title = "Low-Temperature Cleaning of HF-Passivated Si(111) Surface with VUV Light",

abstract = "Photon-stimulated desorption (PSD) of H+ ions from the HF-passivated Si(111) surface, whichis terminated with hydrogen, has been studied using synchrotron radiation. Desorption of H+ ions due to Si-H bond breaking is observed at photon energies above 17 eV. A distinct dependence of the H+-PSD yield on the angle of incidence of a photon beam also is observed. It is found that the H+-PSDyield correlates well with the photoabsorbance. The present results suggest the feasibility of cleaning the HF-passivated Si(111) surface at low-temperature by means of irradiation of vacuum-ultraviolet (VUV) light.",

keywords = "HF passivation, Hydrogen ion, Low-temperature cleaning, PSD, Silicon surface, Synchrotron radiation, VUV light",

author = "Yuji Takakuwa and Masafumi Nogawa and Michio Niwano and Hitoshi Katakura and Satoshi Matsuyoshi and Hiroyuki Ishida and Nobuo Miyamoto and Hiroo Kato",

year = "1989",

month = jul,

doi = "10.1143/JJAP.28.L1274",

language = "English",

volume = "28",

pages = "L1274--L1277",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "7 A",

}

TY - JOUR

T1 - Low-Temperature Cleaning of HF-Passivated Si(111) Surface with VUV Light

AU - Takakuwa, Yuji

AU - Nogawa, Masafumi

AU - Niwano, Michio

AU - Katakura, Hitoshi

AU - Matsuyoshi, Satoshi

AU - Ishida, Hiroyuki

AU - Miyamoto, Nobuo

AU - Kato, Hiroo

PY - 1989/7

Y1 - 1989/7

N2 - Photon-stimulated desorption (PSD) of H+ ions from the HF-passivated Si(111) surface, whichis terminated with hydrogen, has been studied using synchrotron radiation. Desorption of H+ ions due to Si-H bond breaking is observed at photon energies above 17 eV. A distinct dependence of the H+-PSD yield on the angle of incidence of a photon beam also is observed. It is found that the H+-PSDyield correlates well with the photoabsorbance. The present results suggest the feasibility of cleaning the HF-passivated Si(111) surface at low-temperature by means of irradiation of vacuum-ultraviolet (VUV) light.

AB - Photon-stimulated desorption (PSD) of H+ ions from the HF-passivated Si(111) surface, whichis terminated with hydrogen, has been studied using synchrotron radiation. Desorption of H+ ions due to Si-H bond breaking is observed at photon energies above 17 eV. A distinct dependence of the H+-PSD yield on the angle of incidence of a photon beam also is observed. It is found that the H+-PSDyield correlates well with the photoabsorbance. The present results suggest the feasibility of cleaning the HF-passivated Si(111) surface at low-temperature by means of irradiation of vacuum-ultraviolet (VUV) light.

KW - HF passivation

KW - Hydrogen ion

KW - Low-temperature cleaning

KW - PSD

KW - Silicon surface

KW - Synchrotron radiation

KW - VUV light

UR - http://www.scopus.com/inward/record.url?scp=0024704844&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024704844&partnerID=8YFLogxK

U2 - 10.1143/JJAP.28.L1274

DO - 10.1143/JJAP.28.L1274

M3 - Article

AN - SCOPUS:0024704844

SN - 0021-4922

VL - 28

SP - L1274-L1277

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 7 A

ER -

Low-Temperature Cleaning of HF-Passivated Si(111) Surface with VUV Light

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this