TY - JOUR
T1 - Low-temperature deposition of silicon nitride films using ultraviolet-irradiated ammonia
AU - Shiba, Yoshinobu
AU - Teramoto, Akinobu
AU - Suwa, Tomoyuki
AU - Ishii, Katsutoshi
AU - Shimizu, Akira
AU - Umezawa, Kota
AU - Kuroda, Rihito
AU - Sugawa, Shigetoshi
N1 - Funding Information:
This work was supported by Tokyo Electron Technology Solutions Limited and was done at the Fluctuation Free Facility of the New Industry Creation Hatchery Center, Tohoku University.
Publisher Copyright:
© 2019 The Electrochemical Society.
PY - 2019
Y1 - 2019
N2 - A low-temperature silicon nitride (SiNx:H) film-deposition technique that utilizes ultraviolet (UV)-irradiated ammonia (NH3) as the reactant gas and nonirradiated disilane (Si2H6) as the precursor gas was investigated. The UV light was only used to generate active species from NH3, not to irradiate the substrate. To determine the effect of the active species on the deposition process, SiNx:H films were deposited via chemical vapor deposition and their refractive index and composition ratio were evaluated. The results demonstrate that the highly reactive species generated from UV-light-irradiated NH3 enabled the deposition of nitrogen-containing films between 30°C and 450°C. N/Si ratio and refractive index of approximately 1.33 and 1.9–2.0, were obtained for a SiNx:H film deposited at 350°C and 450°C, respectively.
AB - A low-temperature silicon nitride (SiNx:H) film-deposition technique that utilizes ultraviolet (UV)-irradiated ammonia (NH3) as the reactant gas and nonirradiated disilane (Si2H6) as the precursor gas was investigated. The UV light was only used to generate active species from NH3, not to irradiate the substrate. To determine the effect of the active species on the deposition process, SiNx:H films were deposited via chemical vapor deposition and their refractive index and composition ratio were evaluated. The results demonstrate that the highly reactive species generated from UV-light-irradiated NH3 enabled the deposition of nitrogen-containing films between 30°C and 450°C. N/Si ratio and refractive index of approximately 1.33 and 1.9–2.0, were obtained for a SiNx:H film deposited at 350°C and 450°C, respectively.
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U2 - 10.1149/2.0131911jss
DO - 10.1149/2.0131911jss
M3 - Article
AN - SCOPUS:85075072599
SN - 2162-8769
VL - 8
SP - P715-P718
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
IS - 11
ER -