Low temperature direct bonding of flip-chip mounting VCSEL to Si substrate

T. Imamura, E. Higurashi, T. Suga, R. Sawada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper describes the result of low temperature direct metal bonding of vertical-cavity surface-emitting laser (VCSEL) for flip-chip mounting to Si substrate by surface activated bonding (SAB) method. In the SAB process, radio frequency (RF) driven, low-pressure argon (Ar) plasma was used to clean the surfaces to be bonded. After organic contaminants on the surfaces of Au electrodes of the VCSEL and Si substrate were removed by Ar RF plasma, Au-Au direct bonding was carried out in the ambient air. The high die-shear strength of 84 MPa (77.4 gf) was achieved at a bonding temperature of 150°C. Therefore, Au SAB bonding in the ambient air can be applied to realize low cost and highly functional optical microsystems.

Original languageEnglish
Title of host publication2006 International Microsystems, Packaging,Assembly Conference Taiwan, IMPACT - Proceedings of Technical Papers
Pages185-188
Number of pages4
DOIs
Publication statusPublished - 2006
Externally publishedYes
Event2006 International Microsystems, Packaging, Assembly Conference Taiwan, IMPACT - Taipei, Taiwan, Province of China
Duration: 2006 Oct 182006 Oct 20

Publication series

Name2006 International Microsystems, Packaging,Assembly Conference Taiwan, IMPACT - Proceedings of Technical Papers

Other

Other2006 International Microsystems, Packaging, Assembly Conference Taiwan, IMPACT
Country/TerritoryTaiwan, Province of China
CityTaipei
Period06/10/1806/10/20

Keywords

  • Flip-chip bonding
  • Hybrid integration
  • Surface activated bonding
  • VCSEL

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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