Low-temperature direct bonding of InP and diamond substrates under atmospheric conditions

Takashi Matsumae; Ryo Takigawa; Yuichi Kurashima; Hideki Takagi; Eiji Higurashi

doi:10.1038/s41598-021-90634-4

Low-temperature direct bonding of InP and diamond substrates under atmospheric conditions

Takashi Matsumae, Ryo Takigawa, Yuichi Kurashima, Hideki Takagi, Eiji Higurashi

Research output: Contribution to journal › Article › peer-review

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Abstract

An InP substrate was directly bonded on a diamond heat spreader for efficient heat dissipation. The InP surface activated by oxygen plasma and the diamond surface cleaned with an NH₃/H₂O₂ mixture were contacted under atmospheric conditions. Subsequently, the InP/diamond specimen was annealed at 250 °C to form direct bonding. The InP and diamond substrates formed atomic bonds with a shear strength of 9.3 MPa through an amorphous intermediate layer with a thickness of 3 nm. As advanced thermal management can be provided by typical surface cleaning processes followed by low-temperature annealing, the proposed bonding method would facilitate next-generation InP devices, such as transistors for high-frequency and high-power operations.

Original language	English
Article number	11109
Journal	Scientific reports
Volume	11
Issue number	1
DOIs	https://doi.org/10.1038/s41598-021-90634-4
Publication status	Published - 2021 Dec
Externally published	Yes

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title = "Low-temperature direct bonding of InP and diamond substrates under atmospheric conditions",

abstract = "An InP substrate was directly bonded on a diamond heat spreader for efficient heat dissipation. The InP surface activated by oxygen plasma and the diamond surface cleaned with an NH3/H2O2 mixture were contacted under atmospheric conditions. Subsequently, the InP/diamond specimen was annealed at 250 °C to form direct bonding. The InP and diamond substrates formed atomic bonds with a shear strength of 9.3 MPa through an amorphous intermediate layer with a thickness of 3 nm. As advanced thermal management can be provided by typical surface cleaning processes followed by low-temperature annealing, the proposed bonding method would facilitate next-generation InP devices, such as transistors for high-frequency and high-power operations.",

author = "Takashi Matsumae and Ryo Takigawa and Yuichi Kurashima and Hideki Takagi and Eiji Higurashi",

note = "Funding Information: This work was supported by JSPS KAKENHI Grant Number JP18K18863. Publisher Copyright: {\textcopyright} 2021, The Author(s).",

year = "2021",

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doi = "10.1038/s41598-021-90634-4",

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T1 - Low-temperature direct bonding of InP and diamond substrates under atmospheric conditions

AU - Matsumae, Takashi

AU - Takigawa, Ryo

AU - Kurashima, Yuichi

AU - Takagi, Hideki

AU - Higurashi, Eiji

PY - 2021/12

Y1 - 2021/12

N2 - An InP substrate was directly bonded on a diamond heat spreader for efficient heat dissipation. The InP surface activated by oxygen plasma and the diamond surface cleaned with an NH3/H2O2 mixture were contacted under atmospheric conditions. Subsequently, the InP/diamond specimen was annealed at 250 °C to form direct bonding. The InP and diamond substrates formed atomic bonds with a shear strength of 9.3 MPa through an amorphous intermediate layer with a thickness of 3 nm. As advanced thermal management can be provided by typical surface cleaning processes followed by low-temperature annealing, the proposed bonding method would facilitate next-generation InP devices, such as transistors for high-frequency and high-power operations.

AB - An InP substrate was directly bonded on a diamond heat spreader for efficient heat dissipation. The InP surface activated by oxygen plasma and the diamond surface cleaned with an NH3/H2O2 mixture were contacted under atmospheric conditions. Subsequently, the InP/diamond specimen was annealed at 250 °C to form direct bonding. The InP and diamond substrates formed atomic bonds with a shear strength of 9.3 MPa through an amorphous intermediate layer with a thickness of 3 nm. As advanced thermal management can be provided by typical surface cleaning processes followed by low-temperature annealing, the proposed bonding method would facilitate next-generation InP devices, such as transistors for high-frequency and high-power operations.

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Low-temperature direct bonding of InP and diamond substrates under atmospheric conditions

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