Low-temperature epitaxial growth of in-situ doped silicon films

Engineering

• Partial Pressure 100%
• Temperature Range 50%
• Dopants 50%
• Low-Temperature 50%
• Deposition Rate 50%
• Substrates 50%
• Growth Rate 50%

Physics

• Silicon Films 100%
• Silicon 50%
• Substrates 50%
• Gases 50%
• Growth Rate 50%

Material Science

• Epitaxy 100%
• Growth Rate 50%
• Doping (Additives) 50%
• Gas 50%
• Low Pressure Chemical Vapor Deposition 50%