By using monomethylsilane (MMS:H3Si-CH3), we have formed a Si1-xCx interfacial buffer layer for 3C-SiC/Si(100) heteroepitaxy at substrate temperature Tf of as low as 450-650°C, which is compared to the conventional carbonization temperature of 900 °C or higher. The buffer layer allows the subsequent growth of high-quality single-crystalline 3C-SiC films at 900 °C without formation of voids in the Si substrate at the interface. The grown 3C-SiC films degrade for Tf<450 or >650 °C. The low processing temperature as well as the suppressed Si outdiffusion can be related to the inclusion of both Si-H and Si-C bonds within the MMS molecule.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2001 Aug 6|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)