Low-temperature formation of an interfacial buffer layer using monomethylsilane for 3C-SiC/Si(100) heteroepitaxy

Hideki Nakazawa; Maki Suemitsu

doi:10.1063/1.1390476

Low-temperature formation of an interfacial buffer layer using monomethylsilane for 3C-SiC/Si(100) heteroepitaxy

Hideki Nakazawa, Maki Suemitsu

Information Devices Division

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

By using monomethylsilane (MMS:H₃Si-CH₃), we have formed a Si_1-xC_x interfacial buffer layer for 3C-SiC/Si(100) heteroepitaxy at substrate temperature T_f of as low as 450-650°C, which is compared to the conventional carbonization temperature of 900 °C or higher. The buffer layer allows the subsequent growth of high-quality single-crystalline 3C-SiC films at 900 °C without formation of voids in the Si substrate at the interface. The grown 3C-SiC films degrade for T_f<450 or >650 °C. The low processing temperature as well as the suppressed Si outdiffusion can be related to the inclusion of both Si-H and Si-C bonds within the MMS molecule.

Original language	English
Pages (from-to)	755-757
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	6
DOIs	https://doi.org/10.1063/1.1390476
Publication status	Published - 2001 Aug 6

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1390476

Cite this

@article{31c9315c7fd44ca494c2d0f1e611937a,

title = "Low-temperature formation of an interfacial buffer layer using monomethylsilane for 3C-SiC/Si(100) heteroepitaxy",

abstract = "By using monomethylsilane (MMS:H3Si-CH3), we have formed a Si1-xCx interfacial buffer layer for 3C-SiC/Si(100) heteroepitaxy at substrate temperature Tf of as low as 450-650°C, which is compared to the conventional carbonization temperature of 900 °C or higher. The buffer layer allows the subsequent growth of high-quality single-crystalline 3C-SiC films at 900 °C without formation of voids in the Si substrate at the interface. The grown 3C-SiC films degrade for Tf<450 or >650 °C. The low processing temperature as well as the suppressed Si outdiffusion can be related to the inclusion of both Si-H and Si-C bonds within the MMS molecule.",

author = "Hideki Nakazawa and Maki Suemitsu",

year = "2001",

month = aug,

day = "6",

doi = "10.1063/1.1390476",

language = "English",

volume = "79",

pages = "755--757",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - Low-temperature formation of an interfacial buffer layer using monomethylsilane for 3C-SiC/Si(100) heteroepitaxy

AU - Nakazawa, Hideki

AU - Suemitsu, Maki

PY - 2001/8/6

Y1 - 2001/8/6

N2 - By using monomethylsilane (MMS:H3Si-CH3), we have formed a Si1-xCx interfacial buffer layer for 3C-SiC/Si(100) heteroepitaxy at substrate temperature Tf of as low as 450-650°C, which is compared to the conventional carbonization temperature of 900 °C or higher. The buffer layer allows the subsequent growth of high-quality single-crystalline 3C-SiC films at 900 °C without formation of voids in the Si substrate at the interface. The grown 3C-SiC films degrade for Tf<450 or >650 °C. The low processing temperature as well as the suppressed Si outdiffusion can be related to the inclusion of both Si-H and Si-C bonds within the MMS molecule.

AB - By using monomethylsilane (MMS:H3Si-CH3), we have formed a Si1-xCx interfacial buffer layer for 3C-SiC/Si(100) heteroepitaxy at substrate temperature Tf of as low as 450-650°C, which is compared to the conventional carbonization temperature of 900 °C or higher. The buffer layer allows the subsequent growth of high-quality single-crystalline 3C-SiC films at 900 °C without formation of voids in the Si substrate at the interface. The grown 3C-SiC films degrade for Tf<450 or >650 °C. The low processing temperature as well as the suppressed Si outdiffusion can be related to the inclusion of both Si-H and Si-C bonds within the MMS molecule.

UR - http://www.scopus.com/inward/record.url?scp=0039782253&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0039782253&partnerID=8YFLogxK

U2 - 10.1063/1.1390476

DO - 10.1063/1.1390476

M3 - Article

AN - SCOPUS:0039782253

SN - 0003-6951

VL - 79

SP - 755

EP - 757

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Low-temperature formation of an interfacial buffer layer using monomethylsilane for 3C-SiC/Si(100) heteroepitaxy

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this