Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure

M. Matsumoto; Y. Inayoshi; M. Suemitsu; E. Miyamoto; T. Yara; S. Nakajima; T. Uehara; Y. Toyoshima

doi:10.1016/j.apsusc.2008.02.186

Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure

M. Matsumoto, Y. Inayoshi, M. Suemitsu, E. Miyamoto, T. Yara, S. Nakajima, T. Uehara, Y. Toyoshima

Information Devices Division

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Silicon nitride (SiN _X ) film fabrication on polyethylene terephthalate (PET) substrates has been achieved at a low temperature (∼100 °C) by plasma enhanced chemical vapor deposition operated at near atmospheric pressures. A short-pulse based power system was employed to maintain a stable discharge of SiH ₄ , H ₂ and N ₂ in near atmospheric pressures without the use of any inert gases such as He. The deposited films were characterized by X-ray photoelectron spectroscopy. Cross sections of the films were observed by scanning electron microscope (SEM). Despite the use of N ₂ in place of NH ₃ , a high deposition rate (290 nm/min) was obtained by this near-atmospheric-pressure plasma.

Original language	English
Pages (from-to)	6208-6210
Number of pages	3
Journal	Applied Surface Science
Volume	254
Issue number	19
DOIs	https://doi.org/10.1016/j.apsusc.2008.02.186
Publication status	Published - 2008 Jul 30

Keywords

Atmospheric pressure
PECVD
Polyethylene terephthalate
Silicon nitride

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2008.02.186

Cite this

@article{513fea5c46b74567aee7b0118efd0943,

title = "Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure",

abstract = " Silicon nitride (SiN X ) film fabrication on polyethylene terephthalate (PET) substrates has been achieved at a low temperature (∼100 °C) by plasma enhanced chemical vapor deposition operated at near atmospheric pressures. A short-pulse based power system was employed to maintain a stable discharge of SiH 4 , H 2 and N 2 in near atmospheric pressures without the use of any inert gases such as He. The deposited films were characterized by X-ray photoelectron spectroscopy. Cross sections of the films were observed by scanning electron microscope (SEM). Despite the use of N 2 in place of NH 3 , a high deposition rate (290 nm/min) was obtained by this near-atmospheric-pressure plasma.",

keywords = "Atmospheric pressure, PECVD, Polyethylene terephthalate, Silicon nitride",

author = "M. Matsumoto and Y. Inayoshi and M. Suemitsu and E. Miyamoto and T. Yara and S. Nakajima and T. Uehara and Y. Toyoshima",

year = "2008",

month = jul,

day = "30",

doi = "10.1016/j.apsusc.2008.02.186",

language = "English",

volume = "254",

pages = "6208--6210",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "19",

}

TY - JOUR

T1 - Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure

AU - Matsumoto, M.

AU - Inayoshi, Y.

AU - Suemitsu, M.

AU - Miyamoto, E.

AU - Yara, T.

AU - Nakajima, S.

AU - Uehara, T.

AU - Toyoshima, Y.

PY - 2008/7/30

Y1 - 2008/7/30

N2 - Silicon nitride (SiN X ) film fabrication on polyethylene terephthalate (PET) substrates has been achieved at a low temperature (∼100 °C) by plasma enhanced chemical vapor deposition operated at near atmospheric pressures. A short-pulse based power system was employed to maintain a stable discharge of SiH 4 , H 2 and N 2 in near atmospheric pressures without the use of any inert gases such as He. The deposited films were characterized by X-ray photoelectron spectroscopy. Cross sections of the films were observed by scanning electron microscope (SEM). Despite the use of N 2 in place of NH 3 , a high deposition rate (290 nm/min) was obtained by this near-atmospheric-pressure plasma.

AB - Silicon nitride (SiN X ) film fabrication on polyethylene terephthalate (PET) substrates has been achieved at a low temperature (∼100 °C) by plasma enhanced chemical vapor deposition operated at near atmospheric pressures. A short-pulse based power system was employed to maintain a stable discharge of SiH 4 , H 2 and N 2 in near atmospheric pressures without the use of any inert gases such as He. The deposited films were characterized by X-ray photoelectron spectroscopy. Cross sections of the films were observed by scanning electron microscope (SEM). Despite the use of N 2 in place of NH 3 , a high deposition rate (290 nm/min) was obtained by this near-atmospheric-pressure plasma.

KW - Atmospheric pressure

KW - PECVD

KW - Polyethylene terephthalate

KW - Silicon nitride

UR - http://www.scopus.com/inward/record.url?scp=45049084981&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=45049084981&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2008.02.186

DO - 10.1016/j.apsusc.2008.02.186

M3 - Article

AN - SCOPUS:45049084981

SN - 0169-4332

VL - 254

SP - 6208

EP - 6210

JO - Applied Surface Science

JF - Applied Surface Science

IS - 19

ER -

Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this