Reflection high-energy electron diffraction (RHEED) was used for in situ monitoring of the growth behavior of GaAs at various temperatures. The growth was performed on both singular and 2° off (001) GaAs substrates. The temperature dependence as well as the As/Ga beam equivalent pressure ratio dependence of the RHEED specular beam intensity oscillation characteristics were studied. Strong RHEED oscillations were observed at low temperatures under As/Ga ratios far from the stoichiometric condition.
|Number of pages||5|
|Journal||Applied Surface Science|
|Publication status||Published - 1998|
|Event||Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn|
Duration: 1997 Oct 27 → 1997 Oct 30