Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: A reflection high-energy electron diffraction study

A. Shen; H. Ohno; Y. Horikoshi; S. P. Guo; Y. Ohno; F. Matsukura

doi:10.1016/S0169-4332(98)00087-7

Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: A reflection high-energy electron diffraction study

A. Shen, H. Ohno, Y. Horikoshi, S. P. Guo, Y. Ohno, F. Matsukura

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Tohoku University

Research output: Contribution to journal › Conference article › peer-review

12 Citations (Scopus)

Abstract

Reflection high-energy electron diffraction (RHEED) was used for in situ monitoring of the growth behavior of GaAs at various temperatures. The growth was performed on both singular and 2° off (001) GaAs substrates. The temperature dependence as well as the As/Ga beam equivalent pressure ratio dependence of the RHEED specular beam intensity oscillation characteristics were studied. Strong RHEED oscillations were observed at low temperatures under As/Ga ratios far from the stoichiometric condition.

Original language	English
Pages (from-to)	382-386
Number of pages	5
Journal	Applied Surface Science
Volume	130-132
DOIs	https://doi.org/10.1016/S0169-4332(98)00087-7
Publication status	Published - 1998
Event	Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn Duration: 1997 Oct 27 → 1997 Oct 30

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10.1016/S0169-4332(98)00087-7

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@article{f0edb442798c4b4dba816ade3824c09d,

title = "Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: A reflection high-energy electron diffraction study",

abstract = "Reflection high-energy electron diffraction (RHEED) was used for in situ monitoring of the growth behavior of GaAs at various temperatures. The growth was performed on both singular and 2° off (001) GaAs substrates. The temperature dependence as well as the As/Ga beam equivalent pressure ratio dependence of the RHEED specular beam intensity oscillation characteristics were studied. Strong RHEED oscillations were observed at low temperatures under As/Ga ratios far from the stoichiometric condition.",

author = "A. Shen and H. Ohno and Y. Horikoshi and Guo, {S. P.} and Y. Ohno and F. Matsukura",

note = "Funding Information: This work was partly supported by the Research for the Future program (No. JSPS-RFTF97P00202) from the Japan Society for the Promotion of Science and by a Grant-in-Aid for the Scientific Research (No. 09244103) from the Ministry of Education, Science, Sports, and Culture, Japan.; Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 ; Conference date: 27-10-1997 Through 30-10-1997",

year = "1998",

doi = "10.1016/S0169-4332(98)00087-7",

language = "English",

volume = "130-132",

pages = "382--386",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

TY - JOUR

T1 - Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure

T2 - Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4

AU - Shen, A.

AU - Ohno, H.

AU - Horikoshi, Y.

AU - Guo, S. P.

AU - Ohno, Y.

AU - Matsukura, F.

N1 - Funding Information: This work was partly supported by the Research for the Future program (No. JSPS-RFTF97P00202) from the Japan Society for the Promotion of Science and by a Grant-in-Aid for the Scientific Research (No. 09244103) from the Ministry of Education, Science, Sports, and Culture, Japan.

PY - 1998

Y1 - 1998

N2 - Reflection high-energy electron diffraction (RHEED) was used for in situ monitoring of the growth behavior of GaAs at various temperatures. The growth was performed on both singular and 2° off (001) GaAs substrates. The temperature dependence as well as the As/Ga beam equivalent pressure ratio dependence of the RHEED specular beam intensity oscillation characteristics were studied. Strong RHEED oscillations were observed at low temperatures under As/Ga ratios far from the stoichiometric condition.

AB - Reflection high-energy electron diffraction (RHEED) was used for in situ monitoring of the growth behavior of GaAs at various temperatures. The growth was performed on both singular and 2° off (001) GaAs substrates. The temperature dependence as well as the As/Ga beam equivalent pressure ratio dependence of the RHEED specular beam intensity oscillation characteristics were studied. Strong RHEED oscillations were observed at low temperatures under As/Ga ratios far from the stoichiometric condition.

UR - http://www.scopus.com/inward/record.url?scp=18744424414&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18744424414&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(98)00087-7

DO - 10.1016/S0169-4332(98)00087-7

M3 - Conference article

AN - SCOPUS:18744424414

SN - 0169-4332

VL - 130-132

SP - 382

EP - 386

JO - Applied Surface Science

JF - Applied Surface Science

Y2 - 27 October 1997 through 30 October 1997

ER -

Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: A reflection high-energy electron diffraction study

Abstract

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