To solve the difficulty of achieving low resistance ohmic contact to p-type ZnSe, the use of an intermediate p-type InAlP layer to p-type ZnSe as a valence band offset reduction layer is studied by gas source MBE (molecular beam epitaxy). It is found that the surface morphology of the In0.5Al0.5P layers grown on (001) ZnSe becomes better as growth temperature is decreased. The further use of the group III-flux modulated growth method produces a better surface morphology. It is found that the hole concentrations as high as 2×1018cm-3 are easily obtained for p-type InAlP layers grown even at low temperature of 350 °C, although a higher Be cell temperature is required than that for a 500 °C grown p-type InAlP due to decreased electrical activity of Be in InAlP. Despite the very high Be concentrations, the Be precipitation/segregation is not observed. These results suggest that the Be-doped InAlP layer can be used as an intermediate layer to form the low resistance ohmic contact to p-type ZnSe.
|Number of pages||4|
|Journal||Conference Proceedings - International Conference on Indium Phosphide and Related Materials|
|Publication status||Published - 1995|
|Event||Proceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn|
Duration: 1995 May 9 → 1995 May 13