TY - JOUR
T1 - Low-temperature growth of high-quality lead zirconate titanate thin films by 28 GHz microwave irradiation
AU - Wang, Z. J.
AU - Kokawa, H.
AU - Takizawa, H.
AU - Ichiki, M.
AU - Maeda, R.
N1 - Funding Information:
The support of this work by a Grant-in-Aid for Scientific Research from the Japanese Ministry of Education, Culture, Sports, Science, and Technology is gratefully acknowledged.
PY - 2005/5/23
Y1 - 2005/5/23
N2 - Pb (Zrx Ti1-x) O3 (PZT) thin films were coated on Pt/Ti/ SiO2 /Si substrates by a sol-gel method and then crystallized by 28 GHz microwave irradiation. The elevated temperature generated by microwave irradiation to obtain the perovskite phase is only 480 °C, which is significantly lower than that of conventional thermal processing. X-ray diffraction analysis indicated that the PZT films crystallized well in the perovskite phase. A scanning electron microscopy image showed that the film has a spherulite grain structure and most of the grains are approximately 2 μm in size. The average values of the remanent polarization, coercive field, dielectric constant, and loss of the PZT films are 40 μCcm2, 50 kV/cm, 1100, and 004, respectively. It is clear that microwave irradiation is effective for obtaining well-crystallized PZT films with good properties at low temperatures.
AB - Pb (Zrx Ti1-x) O3 (PZT) thin films were coated on Pt/Ti/ SiO2 /Si substrates by a sol-gel method and then crystallized by 28 GHz microwave irradiation. The elevated temperature generated by microwave irradiation to obtain the perovskite phase is only 480 °C, which is significantly lower than that of conventional thermal processing. X-ray diffraction analysis indicated that the PZT films crystallized well in the perovskite phase. A scanning electron microscopy image showed that the film has a spherulite grain structure and most of the grains are approximately 2 μm in size. The average values of the remanent polarization, coercive field, dielectric constant, and loss of the PZT films are 40 μCcm2, 50 kV/cm, 1100, and 004, respectively. It is clear that microwave irradiation is effective for obtaining well-crystallized PZT films with good properties at low temperatures.
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U2 - 10.1063/1.1935748
DO - 10.1063/1.1935748
M3 - Article
AN - SCOPUS:20844448186
SN - 0003-6951
VL - 86
SP - 1
EP - 3
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 21
M1 - 212903
ER -