Low-temperature growth of highly crystalline superconducting ZrN thin film on c-GaN layer by pulsed laser deposition

Ya Bin Zhu; Masahiro Ikeda; Yoshihiro Murakami; Atsushi Tsukazaki; Tomoteru Fukumura; Masashi Kawasaki

doi:10.1143/JJAP.46.L1000

Low-temperature growth of highly crystalline superconducting ZrN thin film on c-GaN layer by pulsed laser deposition

Ya Bin Zhu, Masahiro Ikeda, Yoshihiro Murakami, Atsushi Tsukazaki, Tomoteru Fukumura, Masashi Kawasaki

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Superconducting ZrN thin films were fabricated on c-GaN/c-Al ₂O₃ substrates at low growth temperatures ranging from 200 to 300°C by pulsed laser deposition. ZrN(111) thin films were epitaxially grown on c-GaN/c-Al₂O₃ substrates, while the growth on C-Al₂O₃ substrates yielded poorer crystallinity. The use of Zr metal and ZrN targets respectively resulted in higher crystallinity and a higher superconducting transition temperature of up to 7.3 K, indicating that the superconducting transition temperature is not closely related to the crystallinity. The results suggest the usefulness of a GaN layer for the growth of cubic-nitride thin films.

Original language	English
Pages (from-to)	L1000-L1002
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	46
Issue number	41-44
DOIs	https://doi.org/10.1143/JJAP.46.L1000
Publication status	Published - 2007 Nov 9

Keywords

GaN
Pulsed laser deposition
Superconductivity
ZrN

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.46.L1000

Cite this

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title = "Low-temperature growth of highly crystalline superconducting ZrN thin film on c-GaN layer by pulsed laser deposition",

abstract = "Superconducting ZrN thin films were fabricated on c-GaN/c-Al 2O3 substrates at low growth temperatures ranging from 200 to 300°C by pulsed laser deposition. ZrN(111) thin films were epitaxially grown on c-GaN/c-Al2O3 substrates, while the growth on C-Al2O3 substrates yielded poorer crystallinity. The use of Zr metal and ZrN targets respectively resulted in higher crystallinity and a higher superconducting transition temperature of up to 7.3 K, indicating that the superconducting transition temperature is not closely related to the crystallinity. The results suggest the usefulness of a GaN layer for the growth of cubic-nitride thin films.",

keywords = "GaN, Pulsed laser deposition, Superconductivity, ZrN",

author = "Zhu, {Ya Bin} and Masahiro Ikeda and Yoshihiro Murakami and Atsushi Tsukazaki and Tomoteru Fukumura and Masashi Kawasaki",

year = "2007",

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T1 - Low-temperature growth of highly crystalline superconducting ZrN thin film on c-GaN layer by pulsed laser deposition

AU - Zhu, Ya Bin

AU - Ikeda, Masahiro

AU - Murakami, Yoshihiro

AU - Tsukazaki, Atsushi

AU - Fukumura, Tomoteru

AU - Kawasaki, Masashi

PY - 2007/11/9

Y1 - 2007/11/9

N2 - Superconducting ZrN thin films were fabricated on c-GaN/c-Al 2O3 substrates at low growth temperatures ranging from 200 to 300°C by pulsed laser deposition. ZrN(111) thin films were epitaxially grown on c-GaN/c-Al2O3 substrates, while the growth on C-Al2O3 substrates yielded poorer crystallinity. The use of Zr metal and ZrN targets respectively resulted in higher crystallinity and a higher superconducting transition temperature of up to 7.3 K, indicating that the superconducting transition temperature is not closely related to the crystallinity. The results suggest the usefulness of a GaN layer for the growth of cubic-nitride thin films.

AB - Superconducting ZrN thin films were fabricated on c-GaN/c-Al 2O3 substrates at low growth temperatures ranging from 200 to 300°C by pulsed laser deposition. ZrN(111) thin films were epitaxially grown on c-GaN/c-Al2O3 substrates, while the growth on C-Al2O3 substrates yielded poorer crystallinity. The use of Zr metal and ZrN targets respectively resulted in higher crystallinity and a higher superconducting transition temperature of up to 7.3 K, indicating that the superconducting transition temperature is not closely related to the crystallinity. The results suggest the usefulness of a GaN layer for the growth of cubic-nitride thin films.

KW - GaN

KW - Pulsed laser deposition

KW - Superconductivity

KW - ZrN

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ER -

Low-temperature growth of highly crystalline superconducting ZrN thin film on c-GaN layer by pulsed laser deposition

Abstract

Keywords

ASJC Scopus subject areas

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