@inproceedings{bfd9727af78a4ec796b2f406c490c176,
title = "Low-temperature heteroepitaxial growth of 3C-SiC(111) on Si(110) substrate using monomethylsilane",
abstract = "Heteroepitaxial growth of 3C-SiC on Si(110) substrate has been successfully conducted at T=1000°C by using monomethylsilane as a single source gas. X-ray diffraction (XRD) reveals that the growth orientation of the film is rotated and a 3C-SiC(111) film is formed on this Si(110) substrate. The film quality, as evaluated with the half width of the XRD rocking curve, shows improvement from that of 3C-SiC(111)/Si(111) film. The lattice constant anisotropy (a∥-a⊥)/a∥ between the lateral and the growth directions also decreased by a factor of four from that of 3C-SiC(111)/Si(111), and the two lattice constants approach to that of bulk SC-SiC. These results indicate significant reduction in the strain of the 3C-SiC film in this 3C-SiC(111)/Si(110) system. XRD φ-scan indicates presence of double domains with almost equal areas. Copyright The Electrochemical Society.",
author = "Atsushi Konno and Yuzuru Narita and Takashi Ito and Kanji Yasui and Hideki Nakazawa and Tetsuo Endoh and Maki Suemitsu",
year = "2006",
doi = "10.1149/1.2357236",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "449--455",
booktitle = "State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7",
edition = "5",
note = "State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7 - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",
}