Low-Temperature Heteroepitaxial Growth of Single-Domain V-Doped ZnO Films on c-Face Sapphire

Hiroshi Chiba, Tatsuya Mori, Tomoyuki Kawashima, Katsuyoshi Washio

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


High-quality single-domain (ZnO[11–20]//Al2O3[10–10]) ZnO heteroepitaxial growth on c-face sapphire [Al2O3(0001)] substrate at low temperature was investigated by vanadium (V) doping at growth temperatures between 150°C and 450°C using radiofrequency (RF) magnetron sputtering. In low-temperature growth at 150°C and 200°C, 30° twisted domains (ZnO[10–10]//Al2O3[10–10]) were eliminated and good in-plane crystal orientation was obtained for V doping of about 2 at.% to 3 at.%. Single domains were grown from the early stage. From the changes of surface morphology and growth rate, it was considered that migration during the growth was enhanced due to the increase of the diffusion energy of adatoms, while random nucleation was suppressed.

Original languageEnglish
Pages (from-to)1351-1356
Number of pages6
JournalJournal of Electronic Materials
Issue number5
Publication statusPublished - 2015 Mar 24


  • RF magnetron sputtering
  • Transparent conductive oxide
  • ZnO
  • doping
  • twisted domain
  • vanadium

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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