Low-temperature InGaAs oxidation using oxygen neutral beam

Chang Yong Lee; Akio Higo; Cédric Thomas; Takeru Okada; Takuya Ozaki; Masakazu Sugiyama; Yoshiaki Nakano; Seiji Samukawa

doi:10.7567/JJAP.57.070305

Low-temperature InGaAs oxidation using oxygen neutral beam

Chang Yong Lee, Akio Higo, Cédric Thomas, Takeru Okada, Takuya Ozaki, Masakazu Sugiyama, Yoshiaki Nakano, Seiji Samukawa

ENG - Electronic Engineering

Research output: Contribution to journal › Article › peer-review

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Abstract

The oxidation of InGaAs and the mechanisms underlying this process were investigated using a low-energy oxygen neutral beam. The thickness of the oxide layer and the components of In, O, Ga, and As were examined by cross-sectional transmission electron microscopy (TEM) and X-ray photoemission spectroscopy (XPS). Extending the oxidation duration together with the use of a high indium concentration generated a thicker InGaAs oxide layer because of the difference in chemical bond strength. The oxidation of InGaAs, which was successful even at room temperature, resulted in a high-quality interface because of the highly reactive neutral beam and its extremely low activation energy.

Original language	English
Article number	070305
Journal	Japanese Journal of Applied Physics
Volume	57
Issue number	7
DOIs	https://doi.org/10.7567/JJAP.57.070305
Publication status	Published - 2018 Jul

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title = "Low-temperature InGaAs oxidation using oxygen neutral beam",

abstract = "The oxidation of InGaAs and the mechanisms underlying this process were investigated using a low-energy oxygen neutral beam. The thickness of the oxide layer and the components of In, O, Ga, and As were examined by cross-sectional transmission electron microscopy (TEM) and X-ray photoemission spectroscopy (XPS). Extending the oxidation duration together with the use of a high indium concentration generated a thicker InGaAs oxide layer because of the difference in chemical bond strength. The oxidation of InGaAs, which was successful even at room temperature, resulted in a high-quality interface because of the highly reactive neutral beam and its extremely low activation energy.",

author = "Lee, {Chang Yong} and Akio Higo and C{\'e}dric Thomas and Takeru Okada and Takuya Ozaki and Masakazu Sugiyama and Yoshiaki Nakano and Seiji Samukawa",

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year = "2018",

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T1 - Low-temperature InGaAs oxidation using oxygen neutral beam

AU - Lee, Chang Yong

AU - Higo, Akio

AU - Thomas, Cédric

AU - Okada, Takeru

AU - Ozaki, Takuya

AU - Sugiyama, Masakazu

AU - Nakano, Yoshiaki

AU - Samukawa, Seiji

PY - 2018/7

Y1 - 2018/7

N2 - The oxidation of InGaAs and the mechanisms underlying this process were investigated using a low-energy oxygen neutral beam. The thickness of the oxide layer and the components of In, O, Ga, and As were examined by cross-sectional transmission electron microscopy (TEM) and X-ray photoemission spectroscopy (XPS). Extending the oxidation duration together with the use of a high indium concentration generated a thicker InGaAs oxide layer because of the difference in chemical bond strength. The oxidation of InGaAs, which was successful even at room temperature, resulted in a high-quality interface because of the highly reactive neutral beam and its extremely low activation energy.

AB - The oxidation of InGaAs and the mechanisms underlying this process were investigated using a low-energy oxygen neutral beam. The thickness of the oxide layer and the components of In, O, Ga, and As were examined by cross-sectional transmission electron microscopy (TEM) and X-ray photoemission spectroscopy (XPS). Extending the oxidation duration together with the use of a high indium concentration generated a thicker InGaAs oxide layer because of the difference in chemical bond strength. The oxidation of InGaAs, which was successful even at room temperature, resulted in a high-quality interface because of the highly reactive neutral beam and its extremely low activation energy.

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DO - 10.7567/JJAP.57.070305

M3 - Article

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SN - 0021-4922

VL - 57

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 7

M1 - 070305

ER -

Low-temperature InGaAs oxidation using oxygen neutral beam

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