Low-temperature InGaAs oxidation using oxygen neutral beam

Chang Yong Lee, Akio Higo, Cédric Thomas, Takeru Okada, Takuya Ozaki, Masakazu Sugiyama, Yoshiaki Nakano, Seiji Samukawa

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


The oxidation of InGaAs and the mechanisms underlying this process were investigated using a low-energy oxygen neutral beam. The thickness of the oxide layer and the components of In, O, Ga, and As were examined by cross-sectional transmission electron microscopy (TEM) and X-ray photoemission spectroscopy (XPS). Extending the oxidation duration together with the use of a high indium concentration generated a thicker InGaAs oxide layer because of the difference in chemical bond strength. The oxidation of InGaAs, which was successful even at room temperature, resulted in a high-quality interface because of the highly reactive neutral beam and its extremely low activation energy.

Original languageEnglish
Article number070305
JournalJapanese Journal of Applied Physics
Issue number7
Publication statusPublished - 2018 Jul


Dive into the research topics of 'Low-temperature InGaAs oxidation using oxygen neutral beam'. Together they form a unique fingerprint.

Cite this