TY - JOUR
T1 - Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As
AU - Shen, A.
AU - Matsukura, F.
AU - Guo, S. P.
AU - Sugawara, Y.
AU - Ohno, H.
AU - Tani, M.
AU - Abe, H.
AU - Liu, H. C.
N1 - Funding Information:
This work was partially supported by “Research for the Future” Program (No. JSPJ-RFTF97P00202) from the Japan Society for the Promotion of Science (JSPS) and by a Grant-in-Aid for Scientific Research on Priority Area “Spin Controlled Semiconductor Nanostructures” (No. 09244103) from the Ministry of Education, Science, Sports and Culture, Japan. The authors thank Y. Ohno, N. Akiba, T. Kuroiwa and T. Omiya for helpful discussions.
PY - 1999/5
Y1 - 1999/5
N2 - GaAs and (Ga, Mn)As were grown by low-temperature (LT) MBE. In this paper we report the growth condition dependence of properties of LT GaAs and (Ga,Mn)As. Transient reflectivity measurements showed that the carrier lifetime in LT GaAs can be modified by changing the V/III ratio. The Curie temperature of (Ga,Mn)As, determined by magneto-transport measurements, was also shown to be a function of V/III ratio.
AB - GaAs and (Ga, Mn)As were grown by low-temperature (LT) MBE. In this paper we report the growth condition dependence of properties of LT GaAs and (Ga,Mn)As. Transient reflectivity measurements showed that the carrier lifetime in LT GaAs can be modified by changing the V/III ratio. The Curie temperature of (Ga,Mn)As, determined by magneto-transport measurements, was also shown to be a function of V/III ratio.
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U2 - 10.1016/S0022-0248(98)01447-X
DO - 10.1016/S0022-0248(98)01447-X
M3 - Conference article
AN - SCOPUS:0032660318
SN - 0022-0248
VL - 201
SP - 679
EP - 683
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
T2 - Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X)
Y2 - 31 August 1998 through 4 September 1998
ER -