GaAs and (Ga, Mn)As were grown by low-temperature (LT) MBE. In this paper we report the growth condition dependence of properties of LT GaAs and (Ga,Mn)As. Transient reflectivity measurements showed that the carrier lifetime in LT GaAs can be modified by changing the V/III ratio. The Curie temperature of (Ga,Mn)As, determined by magneto-transport measurements, was also shown to be a function of V/III ratio.
|Number of pages||5|
|Journal||Journal of Crystal Growth|
|Publication status||Published - 1999 May|
|Event||Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes|
Duration: 1998 Aug 31 → 1998 Sept 4