Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As

A. Shen, F. Matsukura, S. P. Guo, Y. Sugawara, H. Ohno, M. Tani, H. Abe, H. C. Liu

Research output: Contribution to journalConference articlepeer-review

39 Citations (Scopus)


GaAs and (Ga, Mn)As were grown by low-temperature (LT) MBE. In this paper we report the growth condition dependence of properties of LT GaAs and (Ga,Mn)As. Transient reflectivity measurements showed that the carrier lifetime in LT GaAs can be modified by changing the V/III ratio. The Curie temperature of (Ga,Mn)As, determined by magneto-transport measurements, was also shown to be a function of V/III ratio.

Original languageEnglish
Pages (from-to)679-683
Number of pages5
JournalJournal of Crystal Growth
Publication statusPublished - 1999 May
EventProceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
Duration: 1998 Aug 311998 Sept 4


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