TY - GEN
T1 - Low-temperature preparation of crystallized zirconia films by ECR plasma MOCVD
AU - Masumoto, Hiroshi
AU - Goto, Takashi
PY - 2006
Y1 - 2006
N2 - Zirconia (ZrO2) thin films were deposited at low temperatures on quartz and polyamidoimide substrates by electron cyclotron resonance (ECR) plasma MOCVD. Zr-hexa-fluoro-acetylacetonato [Zr(Hfac)4] solution was used as a precursor. Substrate temperature (Tsub) was from 300 to 973 K by a water-cooling holder and an infrared lamp heater. Cubic and monoclinic zirconia films were obtained on polyamidoimide substrates at 300 K. The ECR plasma was significantly effective to prepare crystallized ZrO 2 films at low temperatures.
AB - Zirconia (ZrO2) thin films were deposited at low temperatures on quartz and polyamidoimide substrates by electron cyclotron resonance (ECR) plasma MOCVD. Zr-hexa-fluoro-acetylacetonato [Zr(Hfac)4] solution was used as a precursor. Substrate temperature (Tsub) was from 300 to 973 K by a water-cooling holder and an infrared lamp heater. Cubic and monoclinic zirconia films were obtained on polyamidoimide substrates at 300 K. The ECR plasma was significantly effective to prepare crystallized ZrO 2 films at low temperatures.
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M3 - Conference contribution
AN - SCOPUS:33646457215
SN - 1558998446
SN - 9781558998445
T3 - Materials Research Society Symposium Proceedings
SP - 183
EP - 188
BT - Materials Research Society Symposium Proceedings
T2 - 2005 Materials Research Society Fall Meeting
Y2 - 28 November 2005 through 1 December 2005
ER -