Low-temperature processing of PZT thin films by 2.45 GHz microwave heating

Z. J. Wang; Y. Otsuka; Z. Cao; M. W. Zhu; N. Yoshikawa; H. Kokawa

doi:10.1117/12.810604

Low-temperature processing of PZT thin films by 2.45 GHz microwave heating

Z. J. Wang, Y. Otsuka, Z. Cao, M. W. Zhu, N. Yoshikawa, H. Kokawa

ENG - Graduate School of Engineering (Common - Materials Science and Engineering)

Research output: Contribution to journal › Conference article › peer-review

Abstract

The effect of microwave heating with a frequency of 2.45 GHz on the low-temperature crystallization of Pb(Zr_xTi_l-x)O3 (PZT) films was investigated. PZT thin films were coated on Pt/Ti/SiO₂/Si substrates by the sol-gel method and then crystallized by single-mode 2.45 GHz microwave irradiation in the magnetic field. The elevated temperature generated by microwave heating used to obtain the perovskite phase was only 450°C, which is significantly lower than that of conventional thermal processing. The PZT films crystallized by microwave heating at 450°C showed similar ferroelectric properties to those of the films crystallized by conventional thermal processing at 600°C. The average remanent polarization and coercive field of the PZT films are approximately 21 μC/cm² and 90 kV/cm, respectively. It is clear that single-mode microwave irradiation in the magnetic field is effective for obtaining perovskite PZT thin films at low temperatures.

Original language	English
Article number	726702
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7267
DOIs	https://doi.org/10.1117/12.810604
Publication status	Published - 2008
Event	Smart Materials V - Melbourne, VIC, Australia Duration: 2008 Dec 10 → 2008 Dec 12

Keywords

Electrical properties
Lead zirconate titanate (PZT)
Microstructure
Microwave heating
Sol-gel method

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title = "Low-temperature processing of PZT thin films by 2.45 GHz microwave heating",

abstract = "The effect of microwave heating with a frequency of 2.45 GHz on the low-temperature crystallization of Pb(ZrxTil-x)O3 (PZT) films was investigated. PZT thin films were coated on Pt/Ti/SiO2/Si substrates by the sol-gel method and then crystallized by single-mode 2.45 GHz microwave irradiation in the magnetic field. The elevated temperature generated by microwave heating used to obtain the perovskite phase was only 450°C, which is significantly lower than that of conventional thermal processing. The PZT films crystallized by microwave heating at 450°C showed similar ferroelectric properties to those of the films crystallized by conventional thermal processing at 600°C. The average remanent polarization and coercive field of the PZT films are approximately 21 μC/cm2 and 90 kV/cm, respectively. It is clear that single-mode microwave irradiation in the magnetic field is effective for obtaining perovskite PZT thin films at low temperatures.",

keywords = "Electrical properties, Lead zirconate titanate (PZT), Microstructure, Microwave heating, Sol-gel method",

author = "Wang, {Z. J.} and Y. Otsuka and Z. Cao and Zhu, {M. W.} and N. Yoshikawa and H. Kokawa",

year = "2008",

doi = "10.1117/12.810604",

language = "English",

volume = "7267",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Smart Materials V ; Conference date: 10-12-2008 Through 12-12-2008",

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TY - JOUR

T1 - Low-temperature processing of PZT thin films by 2.45 GHz microwave heating

AU - Wang, Z. J.

AU - Otsuka, Y.

AU - Cao, Z.

AU - Zhu, M. W.

AU - Yoshikawa, N.

AU - Kokawa, H.

PY - 2008

Y1 - 2008

N2 - The effect of microwave heating with a frequency of 2.45 GHz on the low-temperature crystallization of Pb(ZrxTil-x)O3 (PZT) films was investigated. PZT thin films were coated on Pt/Ti/SiO2/Si substrates by the sol-gel method and then crystallized by single-mode 2.45 GHz microwave irradiation in the magnetic field. The elevated temperature generated by microwave heating used to obtain the perovskite phase was only 450°C, which is significantly lower than that of conventional thermal processing. The PZT films crystallized by microwave heating at 450°C showed similar ferroelectric properties to those of the films crystallized by conventional thermal processing at 600°C. The average remanent polarization and coercive field of the PZT films are approximately 21 μC/cm2 and 90 kV/cm, respectively. It is clear that single-mode microwave irradiation in the magnetic field is effective for obtaining perovskite PZT thin films at low temperatures.

AB - The effect of microwave heating with a frequency of 2.45 GHz on the low-temperature crystallization of Pb(ZrxTil-x)O3 (PZT) films was investigated. PZT thin films were coated on Pt/Ti/SiO2/Si substrates by the sol-gel method and then crystallized by single-mode 2.45 GHz microwave irradiation in the magnetic field. The elevated temperature generated by microwave heating used to obtain the perovskite phase was only 450°C, which is significantly lower than that of conventional thermal processing. The PZT films crystallized by microwave heating at 450°C showed similar ferroelectric properties to those of the films crystallized by conventional thermal processing at 600°C. The average remanent polarization and coercive field of the PZT films are approximately 21 μC/cm2 and 90 kV/cm, respectively. It is clear that single-mode microwave irradiation in the magnetic field is effective for obtaining perovskite PZT thin films at low temperatures.

KW - Electrical properties

KW - Lead zirconate titanate (PZT)

KW - Microstructure

KW - Microwave heating

KW - Sol-gel method

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U2 - 10.1117/12.810604

DO - 10.1117/12.810604

M3 - Conference article

AN - SCOPUS:62449146716

SN - 0277-786X

VL - 7267

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 726702

T2 - Smart Materials V

Y2 - 10 December 2008 through 12 December 2008

ER -

Low-temperature processing of PZT thin films by 2.45 GHz microwave heating

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Keywords

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