Low-temperature processing of PZT thin films by 2.45 GHz microwave heating

Z. J. Wang, Y. Otsuka, Z. Cao, M. W. Zhu, N. Yoshikawa, H. Kokawa

Research output: Contribution to journalConference articlepeer-review


The effect of microwave heating with a frequency of 2.45 GHz on the low-temperature crystallization of Pb(ZrxTil-x)O3 (PZT) films was investigated. PZT thin films were coated on Pt/Ti/SiO2/Si substrates by the sol-gel method and then crystallized by single-mode 2.45 GHz microwave irradiation in the magnetic field. The elevated temperature generated by microwave heating used to obtain the perovskite phase was only 450°C, which is significantly lower than that of conventional thermal processing. The PZT films crystallized by microwave heating at 450°C showed similar ferroelectric properties to those of the films crystallized by conventional thermal processing at 600°C. The average remanent polarization and coercive field of the PZT films are approximately 21 μC/cm2 and 90 kV/cm, respectively. It is clear that single-mode microwave irradiation in the magnetic field is effective for obtaining perovskite PZT thin films at low temperatures.

Original languageEnglish
Article number726702
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 2008
EventSmart Materials V - Melbourne, VIC, Australia
Duration: 2008 Dec 102008 Dec 12


  • Electrical properties
  • Lead zirconate titanate (PZT)
  • Microstructure
  • Microwave heating
  • Sol-gel method


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