TY - JOUR
T1 - Low-temperature scanning tunneling spectroscopy study of two-dimensional electron systems confined in semiconductor heterostructures
AU - Perraud, S.
AU - Kanisawa, K.
AU - Wang, Z. Z.
AU - Hirayama, Y.
PY - 2007/4/1
Y1 - 2007/4/1
N2 - Low-temperature scanning tunneling spectroscopy under ultra-high vacuum was employed to investigate the two-dimensional electron system at the epitaxial surface of Sidoped In0.53Ga0.47As/In0.52Al 0.48As(111)A quantum-well structures. The electron density in the near-surface region of the quantum well could be controlled through modulation doping. Spectra of the electronic local density of states in the conduction band showed a clear step-like energy dependence that reveals the subband states. In spectra acquired at some areas of nanometer size, peaks were observed near subband minima, indicating the existence of bound states.
AB - Low-temperature scanning tunneling spectroscopy under ultra-high vacuum was employed to investigate the two-dimensional electron system at the epitaxial surface of Sidoped In0.53Ga0.47As/In0.52Al 0.48As(111)A quantum-well structures. The electron density in the near-surface region of the quantum well could be controlled through modulation doping. Spectra of the electronic local density of states in the conduction band showed a clear step-like energy dependence that reveals the subband states. In spectra acquired at some areas of nanometer size, peaks were observed near subband minima, indicating the existence of bound states.
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U2 - 10.1088/1742-6596/61/1/184
DO - 10.1088/1742-6596/61/1/184
M3 - Article
AN - SCOPUS:34247516511
SN - 1742-6588
VL - 61
SP - 926
EP - 930
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
IS - 1
M1 - 184
ER -