Low-Temperature Wafer Bonding Using Solid-Liquid Inter-Diffusion Mechanism

Joerg Froemel; Mario Baum; Maik Wiemer; Thomas Gessner

doi:10.1109/JMEMS.2015.2455340

Low-Temperature Wafer Bonding Using Solid-Liquid Inter-Diffusion Mechanism

Joerg Froemel, Mario Baum, Maik Wiemer, Thomas Gessner

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The low temperature joining of semiconductor substrates on wafer level by solid-liquid inter-diffusion bonding using the Cu/Ga and Au/In systems is investigated regarding the bonding parameters and their influence on bond interface properties. The focus is on temperature dependence and composition of interface. In the case of Cu/Ga bonding, a phase transition from CuGa₂ to Cu₉Ga₄ was found to be primarily responsible for an increase in bonding strength. After the temperature treatment of 90 °C, a shear strength of up to 90 MPa could be achieved. Furthermore, the combination of Au and In with composition ratios suitable for AuIn₂ and AuIn intermetallic phase formation was investigated. In the case of AuIn shear strength, 96 MPa was achieved using a bonding temperature of 200 °C. [2014-0325].

Original language	English
Article number	7181635
Pages (from-to)	1973-1980
Number of pages	8
Journal	Journal of Microelectromechanical Systems
Volume	24
Issue number	6
DOIs	https://doi.org/10.1109/JMEMS.2015.2455340
Publication status	Published - 2015 Dec 1

Keywords

Wafer bonding
gallium alloys
intermetallic
solid liquid interdiffusion (SLID)
transient liquid phase (TLP)

ASJC Scopus subject areas

Mechanical Engineering
Electrical and Electronic Engineering

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title = "Low-Temperature Wafer Bonding Using Solid-Liquid Inter-Diffusion Mechanism",

abstract = "The low temperature joining of semiconductor substrates on wafer level by solid-liquid inter-diffusion bonding using the Cu/Ga and Au/In systems is investigated regarding the bonding parameters and their influence on bond interface properties. The focus is on temperature dependence and composition of interface. In the case of Cu/Ga bonding, a phase transition from CuGa2 to Cu9Ga4 was found to be primarily responsible for an increase in bonding strength. After the temperature treatment of 90 °C, a shear strength of up to 90 MPa could be achieved. Furthermore, the combination of Au and In with composition ratios suitable for AuIn2 and AuIn intermetallic phase formation was investigated. In the case of AuIn shear strength, 96 MPa was achieved using a bonding temperature of 200 °C. [2014-0325].",

keywords = "Wafer bonding, gallium alloys, intermetallic, solid liquid interdiffusion (SLID), transient liquid phase (TLP)",

author = "Joerg Froemel and Mario Baum and Maik Wiemer and Thomas Gessner",

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AU - Baum, Mario

AU - Wiemer, Maik

AU - Gessner, Thomas

PY - 2015/12/1

Y1 - 2015/12/1

N2 - The low temperature joining of semiconductor substrates on wafer level by solid-liquid inter-diffusion bonding using the Cu/Ga and Au/In systems is investigated regarding the bonding parameters and their influence on bond interface properties. The focus is on temperature dependence and composition of interface. In the case of Cu/Ga bonding, a phase transition from CuGa2 to Cu9Ga4 was found to be primarily responsible for an increase in bonding strength. After the temperature treatment of 90 °C, a shear strength of up to 90 MPa could be achieved. Furthermore, the combination of Au and In with composition ratios suitable for AuIn2 and AuIn intermetallic phase formation was investigated. In the case of AuIn shear strength, 96 MPa was achieved using a bonding temperature of 200 °C. [2014-0325].

AB - The low temperature joining of semiconductor substrates on wafer level by solid-liquid inter-diffusion bonding using the Cu/Ga and Au/In systems is investigated regarding the bonding parameters and their influence on bond interface properties. The focus is on temperature dependence and composition of interface. In the case of Cu/Ga bonding, a phase transition from CuGa2 to Cu9Ga4 was found to be primarily responsible for an increase in bonding strength. After the temperature treatment of 90 °C, a shear strength of up to 90 MPa could be achieved. Furthermore, the combination of Au and In with composition ratios suitable for AuIn2 and AuIn intermetallic phase formation was investigated. In the case of AuIn shear strength, 96 MPa was achieved using a bonding temperature of 200 °C. [2014-0325].

KW - Wafer bonding

KW - gallium alloys

KW - intermetallic

KW - solid liquid interdiffusion (SLID)

KW - transient liquid phase (TLP)

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Low-Temperature Wafer Bonding Using Solid-Liquid Inter-Diffusion Mechanism

Abstract

Keywords

ASJC Scopus subject areas

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