Low-threshold current-injection single-mode lasing in T-shaped GaAs/AlGaAs quantum wires

Shu Man Liu; Masahiro Yoshita; Makoto Okano; Toshiyuki Ihara; Hirotake Itoh; Hidefumi Akiyama; Loren Pfeiffer; Ken West; Kirk Baldwin

doi:10.1143/JJAP.46.L330

Low-threshold current-injection single-mode lasing in T-shaped GaAs/AlGaAs quantum wires

Shu Man Liu, Masahiro Yoshita, Makoto Okano, Toshiyuki Ihara, Hirotake Itoh, Hidefumi Akiyama, Loren Pfeiffer, Ken West, Kirk Baldwin

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A one-dimensional active region consisting of 20-period T-shaped GaAs/AlGaAs quantum wires of 14 x 6nm² combined with a well-defined current-confinement scheme has been utilized to obtain a low-threshold-current high-efficiency laser. A threshold current as low as 0.27 mA, a single-mode cw output power of 0.13 mW at 1 mA injection current, and a differential quantum efficiency of 12% were achieved at 30 K using a quantum-wire laser with a 500-μm-long Fabry-Perot cavity coatedby high-reflectivity thin metals.

Original language	English
Pages (from-to)	L330-L332
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	46
Issue number	12-16
DOIs	https://doi.org/10.1143/JJAP.46.L330
Publication status	Published - 2007 Apr 13
Externally published	Yes

Keywords

Cleaved-edge overgrowth
Current injection
Low threshold
Quantum-wire laser
Single mode

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.46.L330

Cite this

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title = "Low-threshold current-injection single-mode lasing in T-shaped GaAs/AlGaAs quantum wires",

abstract = "A one-dimensional active region consisting of 20-period T-shaped GaAs/AlGaAs quantum wires of 14 x 6nm2 combined with a well-defined current-confinement scheme has been utilized to obtain a low-threshold-current high-efficiency laser. A threshold current as low as 0.27 mA, a single-mode cw output power of 0.13 mW at 1 mA injection current, and a differential quantum efficiency of 12% were achieved at 30 K using a quantum-wire laser with a 500-μm-long Fabry-Perot cavity coatedby high-reflectivity thin metals.",

keywords = "Cleaved-edge overgrowth, Current injection, Low threshold, Quantum-wire laser, Single mode",

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doi = "10.1143/JJAP.46.L330",

language = "English",

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T1 - Low-threshold current-injection single-mode lasing in T-shaped GaAs/AlGaAs quantum wires

AU - Liu, Shu Man

AU - Yoshita, Masahiro

AU - Okano, Makoto

AU - Ihara, Toshiyuki

AU - Itoh, Hirotake

AU - Akiyama, Hidefumi

AU - Pfeiffer, Loren

AU - West, Ken

AU - Baldwin, Kirk

PY - 2007/4/13

Y1 - 2007/4/13

N2 - A one-dimensional active region consisting of 20-period T-shaped GaAs/AlGaAs quantum wires of 14 x 6nm2 combined with a well-defined current-confinement scheme has been utilized to obtain a low-threshold-current high-efficiency laser. A threshold current as low as 0.27 mA, a single-mode cw output power of 0.13 mW at 1 mA injection current, and a differential quantum efficiency of 12% were achieved at 30 K using a quantum-wire laser with a 500-μm-long Fabry-Perot cavity coatedby high-reflectivity thin metals.

AB - A one-dimensional active region consisting of 20-period T-shaped GaAs/AlGaAs quantum wires of 14 x 6nm2 combined with a well-defined current-confinement scheme has been utilized to obtain a low-threshold-current high-efficiency laser. A threshold current as low as 0.27 mA, a single-mode cw output power of 0.13 mW at 1 mA injection current, and a differential quantum efficiency of 12% were achieved at 30 K using a quantum-wire laser with a 500-μm-long Fabry-Perot cavity coatedby high-reflectivity thin metals.

KW - Cleaved-edge overgrowth

KW - Current injection

KW - Low threshold

KW - Quantum-wire laser

KW - Single mode

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ER -

Low-threshold current-injection single-mode lasing in T-shaped GaAs/AlGaAs quantum wires

Abstract

Keywords

ASJC Scopus subject areas

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