l.55 μm GalnAsP/lnP DFB-BH LDs on corrugated InP substrates were fabricated by only two-stage MOVPE, including burying layer growth. The 9 mA minimum threshold current was achieved with both facets cleaved, which the authors believe is the lowest among MOVPE grown DFB LDs with InP grating. Up to 20 mW maximum output power and 0.21W/A differential quantum efficiency were also attained under single longitudinal mode operation.
- Semiconductor growth
- Semiconductor lasers