Low Threshold Operation of 1.55 μm GalnAsP/lnP Dfb-Bh Lds Entirely Grown by Movpe on Inp Gratings

H. Yamada; T. Sasaki; S. Takano; T. Numai; M. Kitamura; I. Mito

doi:10.1049/el:19880098

Low Threshold Operation of 1.55 μm GalnAsP/lnP Dfb-Bh Lds Entirely Grown by Movpe on Inp Gratings

H. Yamada, T. Sasaki, S. Takano, T. Numai, M. Kitamura, I. Mito

ENG - Communications Engineering

NEC Corporation

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

l.55 μm GalnAsP/lnP DFB-BH LDs on corrugated InP substrates were fabricated by only two-stage MOVPE, including burying layer growth. The 9 mA minimum threshold current was achieved with both facets cleaved, which the authors believe is the lowest among MOVPE grown DFB LDs with InP grating. Up to 20 mW maximum output power and 0.21W/A differential quantum efficiency were also attained under single longitudinal mode operation.

Original language	English
Pages (from-to)	147-149
Number of pages	3
Journal	Electronics Letters
Volume	24
Issue number	3
DOIs	https://doi.org/10.1049/el:19880098
Publication status	Published - 1988

Keywords

Semiconductor growth
Semiconductor lasers

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10.1049/el:19880098

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title = "Low Threshold Operation of 1.55 μm GalnAsP/lnP Dfb-Bh Lds Entirely Grown by Movpe on Inp Gratings",

abstract = "l.55 μm GalnAsP/lnP DFB-BH LDs on corrugated InP substrates were fabricated by only two-stage MOVPE, including burying layer growth. The 9 mA minimum threshold current was achieved with both facets cleaved, which the authors believe is the lowest among MOVPE grown DFB LDs with InP grating. Up to 20 mW maximum output power and 0.21W/A differential quantum efficiency were also attained under single longitudinal mode operation.",

keywords = "Semiconductor growth, Semiconductor lasers",

author = "H. Yamada and T. Sasaki and S. Takano and T. Numai and M. Kitamura and I. Mito",

year = "1988",

doi = "10.1049/el:19880098",

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volume = "24",

pages = "147--149",

journal = "Electronics Letters",

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T1 - Low Threshold Operation of 1.55 μm GalnAsP/lnP Dfb-Bh Lds Entirely Grown by Movpe on Inp Gratings

AU - Yamada, H.

AU - Sasaki, T.

AU - Takano, S.

AU - Numai, T.

AU - Kitamura, M.

AU - Mito, I.

PY - 1988

Y1 - 1988

N2 - l.55 μm GalnAsP/lnP DFB-BH LDs on corrugated InP substrates were fabricated by only two-stage MOVPE, including burying layer growth. The 9 mA minimum threshold current was achieved with both facets cleaved, which the authors believe is the lowest among MOVPE grown DFB LDs with InP grating. Up to 20 mW maximum output power and 0.21W/A differential quantum efficiency were also attained under single longitudinal mode operation.

AB - l.55 μm GalnAsP/lnP DFB-BH LDs on corrugated InP substrates were fabricated by only two-stage MOVPE, including burying layer growth. The 9 mA minimum threshold current was achieved with both facets cleaved, which the authors believe is the lowest among MOVPE grown DFB LDs with InP grating. Up to 20 mW maximum output power and 0.21W/A differential quantum efficiency were also attained under single longitudinal mode operation.

KW - Semiconductor growth

KW - Semiconductor lasers

UR - http://www.scopus.com/inward/record.url?scp=3643142570&partnerID=8YFLogxK

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DO - 10.1049/el:19880098

M3 - Article

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VL - 24

SP - 147

EP - 149

JO - Electronics Letters

JF - Electronics Letters

IS - 3

ER -

Low Threshold Operation of 1.55 μm GalnAsP/lnP Dfb-Bh Lds Entirely Grown by Movpe on Inp Gratings

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Keywords

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