Low-voltage-driven thin film PZT stacked actuator for RF-MEMS switches

Masaaki Moriyama; Yusuke Kawai; Shuji Tanaka; Masayoshi Esashi

doi:10.1541/ieejsmas.132.282

Low-voltage-driven thin film PZT stacked actuator for RF-MEMS switches

Masaaki Moriyama, Yusuke Kawai, Shuji Tanaka, Masayoshi Esashi

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A thin film piezoelectric actuator stacking five PZT (Pb(Zr _0.52,Ti_0.48)O₃) layers has been developed to achieve large displacement and large force at low driving voltage. In this paper, the fabrication process and the operation characteristics of the developed PZT actuator are reported. Each PZT layer of 200nm thickness was deposited by sol-gel method and sandwiched with thin Pt electrodes, which were electrically connected to plus and minus terminals alternately. The displacement-force characteristic of the fabricated actuator shows the maximum displacement of 43μm without load and the estimated maximum contact force of 16μN at a driving voltage of 5V. The developed PZT actuator is applicable to RF-MEMS switches, which need both high contact force and large isolation gap within a limited footprint.

Original language	English
Pages (from-to)	282-287
Number of pages	6
Journal	IEEJ Transactions on Sensors and Micromachines
Volume	132
Issue number	9
DOIs	https://doi.org/10.1541/ieejsmas.132.282
Publication status	Published - 2012

Keywords

Low voltage operation
PZT
Piezoelectric actuator
RF-MEMS switch
Stacking

ASJC Scopus subject areas

Mechanical Engineering
Electrical and Electronic Engineering

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10.1541/ieejsmas.132.282

Cite this

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title = "Low-voltage-driven thin film PZT stacked actuator for RF-MEMS switches",

abstract = "A thin film piezoelectric actuator stacking five PZT (Pb(Zr 0.52,Ti0.48)O3) layers has been developed to achieve large displacement and large force at low driving voltage. In this paper, the fabrication process and the operation characteristics of the developed PZT actuator are reported. Each PZT layer of 200nm thickness was deposited by sol-gel method and sandwiched with thin Pt electrodes, which were electrically connected to plus and minus terminals alternately. The displacement-force characteristic of the fabricated actuator shows the maximum displacement of 43μm without load and the estimated maximum contact force of 16μN at a driving voltage of 5V. The developed PZT actuator is applicable to RF-MEMS switches, which need both high contact force and large isolation gap within a limited footprint.",

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author = "Masaaki Moriyama and Yusuke Kawai and Shuji Tanaka and Masayoshi Esashi",

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T1 - Low-voltage-driven thin film PZT stacked actuator for RF-MEMS switches

AU - Moriyama, Masaaki

AU - Kawai, Yusuke

AU - Tanaka, Shuji

AU - Esashi, Masayoshi

PY - 2012

Y1 - 2012

N2 - A thin film piezoelectric actuator stacking five PZT (Pb(Zr 0.52,Ti0.48)O3) layers has been developed to achieve large displacement and large force at low driving voltage. In this paper, the fabrication process and the operation characteristics of the developed PZT actuator are reported. Each PZT layer of 200nm thickness was deposited by sol-gel method and sandwiched with thin Pt electrodes, which were electrically connected to plus and minus terminals alternately. The displacement-force characteristic of the fabricated actuator shows the maximum displacement of 43μm without load and the estimated maximum contact force of 16μN at a driving voltage of 5V. The developed PZT actuator is applicable to RF-MEMS switches, which need both high contact force and large isolation gap within a limited footprint.

AB - A thin film piezoelectric actuator stacking five PZT (Pb(Zr 0.52,Ti0.48)O3) layers has been developed to achieve large displacement and large force at low driving voltage. In this paper, the fabrication process and the operation characteristics of the developed PZT actuator are reported. Each PZT layer of 200nm thickness was deposited by sol-gel method and sandwiched with thin Pt electrodes, which were electrically connected to plus and minus terminals alternately. The displacement-force characteristic of the fabricated actuator shows the maximum displacement of 43μm without load and the estimated maximum contact force of 16μN at a driving voltage of 5V. The developed PZT actuator is applicable to RF-MEMS switches, which need both high contact force and large isolation gap within a limited footprint.

KW - Low voltage operation

KW - PZT

KW - Piezoelectric actuator

KW - RF-MEMS switch

KW - Stacking

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Low-voltage-driven thin film PZT stacked actuator for RF-MEMS switches

Abstract

Keywords

ASJC Scopus subject areas

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