Low-voltage-driven thin film PZT stacked actuator for RF-MEMS switches

Masaaki Moriyama, Yusuke Kawai, Shuji Tanaka, Masayoshi Esashi

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


A thin film piezoelectric actuator stacking five PZT (Pb(Zr 0.52,Ti0.48)O3) layers has been developed to achieve large displacement and large force at low driving voltage. In this paper, the fabrication process and the operation characteristics of the developed PZT actuator are reported. Each PZT layer of 200nm thickness was deposited by sol-gel method and sandwiched with thin Pt electrodes, which were electrically connected to plus and minus terminals alternately. The displacement-force characteristic of the fabricated actuator shows the maximum displacement of 43μm without load and the estimated maximum contact force of 16μN at a driving voltage of 5V. The developed PZT actuator is applicable to RF-MEMS switches, which need both high contact force and large isolation gap within a limited footprint.

Original languageEnglish
Pages (from-to)282-287
Number of pages6
JournalIEEJ Transactions on Sensors and Micromachines
Issue number9
Publication statusPublished - 2012


  • Low voltage operation
  • PZT
  • Piezoelectric actuator
  • RF-MEMS switch
  • Stacking

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering


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