Low-voltage electrostatically driven nanoelectromechanical-switches

Hiro Iizuka; Takahito Ono

doi:10.1109/TRANSDUCERS.2015.7180985

Low-voltage electrostatically driven nanoelectromechanical-switches

Hiro Iizuka, Takahito Ono

ENG - Mechanical Systems Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

Electrostatically-driven nanoelectromechanical (NEM) switches based on silicon and tungsten as a base material are designed and fabricated by reactive ion etching using Bosch process, and their switching performances are evaluated. The NEM switches consist of three isolated electrodes, i.e. gate, drain, and nanomechanical source. A low switching voltage of 0.8 V is achieved for the Si-based switch with a flexible mechanical structure and the narrow electrode gaps of electrostatic actuators. A method for high aspect ratio etching of W using Bosch process is developed and W-based NEM switches are also developed.

Original language	English
Title of host publication	2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	560-563
Number of pages	4
ISBN (Electronic)	9781479989553
DOIs	https://doi.org/10.1109/TRANSDUCERS.2015.7180985
Publication status	Published - 2015 Aug 5
Event	18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015 - Anchorage, United States Duration: 2015 Jun 21 → 2015 Jun 25

Publication series

Name	2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015

Other

Other	18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015
Country/Territory	United States
City	Anchorage
Period	15/6/21 → 15/6/25

Keywords

Bosch process
Electrostatic actuator
Nanoelectromechanical switches
Reactive ion etching (DRIE)

ASJC Scopus subject areas

Instrumentation
Electrical and Electronic Engineering

Access to Document

10.1109/TRANSDUCERS.2015.7180985

Cite this

Iizuka, H., & Ono, T. (2015). Low-voltage electrostatically driven nanoelectromechanical-switches. In 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015 (pp. 560-563). [7180985] (2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TRANSDUCERS.2015.7180985

Low-voltage electrostatically driven nanoelectromechanical-switches. / Iizuka, Hiro; Ono, Takahito.
2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 560-563 7180985 (2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Iizuka, H & Ono, T 2015, Low-voltage electrostatically driven nanoelectromechanical-switches. in 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015., 7180985, 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015, Institute of Electrical and Electronics Engineers Inc., pp. 560-563, 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015, Anchorage, United States, 15/6/21. https://doi.org/10.1109/TRANSDUCERS.2015.7180985

Iizuka H, Ono T. Low-voltage electrostatically driven nanoelectromechanical-switches. In 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 560-563. 7180985. (2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015). doi: 10.1109/TRANSDUCERS.2015.7180985

Iizuka, Hiro ; Ono, Takahito. / Low-voltage electrostatically driven nanoelectromechanical-switches. 2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 560-563 (2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2015).

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abstract = "Electrostatically-driven nanoelectromechanical (NEM) switches based on silicon and tungsten as a base material are designed and fabricated by reactive ion etching using Bosch process, and their switching performances are evaluated. The NEM switches consist of three isolated electrodes, i.e. gate, drain, and nanomechanical source. A low switching voltage of 0.8 V is achieved for the Si-based switch with a flexible mechanical structure and the narrow electrode gaps of electrostatic actuators. A method for high aspect ratio etching of W using Bosch process is developed and W-based NEM switches are also developed.",

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AB - Electrostatically-driven nanoelectromechanical (NEM) switches based on silicon and tungsten as a base material are designed and fabricated by reactive ion etching using Bosch process, and their switching performances are evaluated. The NEM switches consist of three isolated electrodes, i.e. gate, drain, and nanomechanical source. A low switching voltage of 0.8 V is achieved for the Si-based switch with a flexible mechanical structure and the narrow electrode gaps of electrostatic actuators. A method for high aspect ratio etching of W using Bosch process is developed and W-based NEM switches are also developed.

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Low-voltage electrostatically driven nanoelectromechanical-switches

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Keywords

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