Low-voltage, high-mobility organic thin-film transistors with improved stability

Ute Zschieschang, Tatsuya Yamamoto, Kazuo Takimiya, Hirokazu Kuwabara, Masaaki Ikeda, Tsuyoshi Sekitani, Takao Someya, Hagen Klauk

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Citations (Scopus)


Pentacene is among the most widely employed semiconductors for organic thin-film transistors (TFTs). The main reason is its large field-effect mobility (∼1 cm2/Ns) which results from the relatively large overlap of the delocalized molecular orbitals in the (001) lattice plane of the pentacene thin-film phase [1-4]. But pentacene molecules are easily oxidized at the 6 and 13 positions, and since the oxidation changes the electronic structure of the molecules, the mobility of pentacene TFTs degrades rapidly during air exposure [5,6]. Yamamoto et al. have recently synthesized a six-ring fused heteroarene, dinaphtho-[2,3-b:2',3'-t]thieno[3,2-b]thiophene (DNTT), which has a crystal structure and thin-film morphology similar to those of pentacene, but is less susceptible to oxidation [7]. As a result of the favorable crystal structure and morphology, the mobility in DNTT is similar to that in pentacene, while the greater oxidation resistance affords better air stability of DNTT transistors compared with pentacene devices. Here we report on the static and dynamic performance and on the stability ofDNTT TFTs on flexible polyethylene naphthalate (PEN) substrates.

Original languageEnglish
Title of host publication68th Device Research Conference, DRC 2010
Number of pages2
Publication statusPublished - 2010
Event68th Device Research Conference, DRC 2010 - Notre Dame, IN, United States
Duration: 2010 Jun 212010 Jun 23

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Conference68th Device Research Conference, DRC 2010
Country/TerritoryUnited States
CityNotre Dame, IN


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