Low-voltage organic field-effect transistors for flexible electronics

Ute Zschieschang; Reinhold Rodel; Ulrike Kraft; Kazuo Takimiya; Tarek Zaki; Florian Letzkus; Jorg Butschke; Harald Richter; Joachim N. Burghartz; Wei Xiong; Boris Murmann; Hagen Klauk

doi:10.1109/BCTM.2014.6981295

Low-voltage organic field-effect transistors for flexible electronics

Ute Zschieschang, Reinhold Rodel, Ulrike Kraft, Kazuo Takimiya, Tarek Zaki, Florian Letzkus, Jorg Butschke, Harald Richter, Joachim N. Burghartz, Wei Xiong, Boris Murmann, Hagen Klauk

SCI - Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

A process for the fabrication of bottom-gate, top-contact (inverted staggered) organic thin-film transistors (TFTs) with channel lengths as short as 1 μm on flexible plastic substrates has been developed. The TFTs employ vacuum-deposited small-molecule semiconductors and a low-temperature-processed gate dielectric that is sufficiently thin to allow the TFTs to operate with voltages of about 3 V. The p-channel TFTs have an effective field-effect mobility of about 1 cm²/Vs, an on/off ratio of 10⁷, and a signal propagation delay (measured in 11-stage ring oscillators) of 300 ns per stage. For the n-channel TFTs, an effective field-effect mobility of about 0.06 cm²/Vs, an on/off ratio of 10⁶, and a signal propagation delay of 17 μs per stage have been obtained.

Original language	English
Title of host publication	2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	100-106
Number of pages	7
ISBN (Electronic)	9781479972302
DOIs	https://doi.org/10.1109/BCTM.2014.6981295
Publication status	Published - 2014 Dec 9
Event	2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014 - Coronado, United States Duration: 2014 Sept 28 → 2014 Oct 1

Publication series

Name	Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ISSN (Print)	1088-9299

Conference

Conference	2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014
Country/Territory	United States
City	Coronado
Period	14/9/28 → 14/10/1

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10.1109/BCTM.2014.6981295

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Zschieschang, U., Rodel, R., Kraft, U., Takimiya, K., Zaki, T., Letzkus, F., Butschke, J., Richter, H., Burghartz, J. N., Xiong, W., Murmann, B., & Klauk, H. (2014). Low-voltage organic field-effect transistors for flexible electronics. In 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014 (pp. 100-106). Article 6981295 (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/BCTM.2014.6981295

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title = "Low-voltage organic field-effect transistors for flexible electronics",

abstract = "A process for the fabrication of bottom-gate, top-contact (inverted staggered) organic thin-film transistors (TFTs) with channel lengths as short as 1 μm on flexible plastic substrates has been developed. The TFTs employ vacuum-deposited small-molecule semiconductors and a low-temperature-processed gate dielectric that is sufficiently thin to allow the TFTs to operate with voltages of about 3 V. The p-channel TFTs have an effective field-effect mobility of about 1 cm2/Vs, an on/off ratio of 107, and a signal propagation delay (measured in 11-stage ring oscillators) of 300 ns per stage. For the n-channel TFTs, an effective field-effect mobility of about 0.06 cm2/Vs, an on/off ratio of 106, and a signal propagation delay of 17 μs per stage have been obtained.",

author = "Ute Zschieschang and Reinhold Rodel and Ulrike Kraft and Kazuo Takimiya and Tarek Zaki and Florian Letzkus and Jorg Butschke and Harald Richter and Burghartz, {Joachim N.} and Wei Xiong and Boris Murmann and Hagen Klauk",

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doi = "10.1109/BCTM.2014.6981295",

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series = "Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting",

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Zschieschang, U, Rodel, R, Kraft, U, Takimiya, K, Zaki, T, Letzkus, F, Butschke, J, Richter, H, Burghartz, JN, Xiong, W, Murmann, B & Klauk, H 2014, Low-voltage organic field-effect transistors for flexible electronics. in 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014., 6981295, Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Institute of Electrical and Electronics Engineers Inc., pp. 100-106, 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014, Coronado, United States, 14/9/28. https://doi.org/10.1109/BCTM.2014.6981295

Low-voltage organic field-effect transistors for flexible electronics. / Zschieschang, Ute; Rodel, Reinhold; Kraft, Ulrike et al.
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 100-106 6981295 (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Low-voltage organic field-effect transistors for flexible electronics

AU - Zschieschang, Ute

AU - Rodel, Reinhold

AU - Kraft, Ulrike

AU - Takimiya, Kazuo

AU - Zaki, Tarek

AU - Letzkus, Florian

AU - Butschke, Jorg

AU - Richter, Harald

AU - Burghartz, Joachim N.

AU - Xiong, Wei

AU - Murmann, Boris

AU - Klauk, Hagen

PY - 2014/12/9

Y1 - 2014/12/9

N2 - A process for the fabrication of bottom-gate, top-contact (inverted staggered) organic thin-film transistors (TFTs) with channel lengths as short as 1 μm on flexible plastic substrates has been developed. The TFTs employ vacuum-deposited small-molecule semiconductors and a low-temperature-processed gate dielectric that is sufficiently thin to allow the TFTs to operate with voltages of about 3 V. The p-channel TFTs have an effective field-effect mobility of about 1 cm2/Vs, an on/off ratio of 107, and a signal propagation delay (measured in 11-stage ring oscillators) of 300 ns per stage. For the n-channel TFTs, an effective field-effect mobility of about 0.06 cm2/Vs, an on/off ratio of 106, and a signal propagation delay of 17 μs per stage have been obtained.

AB - A process for the fabrication of bottom-gate, top-contact (inverted staggered) organic thin-film transistors (TFTs) with channel lengths as short as 1 μm on flexible plastic substrates has been developed. The TFTs employ vacuum-deposited small-molecule semiconductors and a low-temperature-processed gate dielectric that is sufficiently thin to allow the TFTs to operate with voltages of about 3 V. The p-channel TFTs have an effective field-effect mobility of about 1 cm2/Vs, an on/off ratio of 107, and a signal propagation delay (measured in 11-stage ring oscillators) of 300 ns per stage. For the n-channel TFTs, an effective field-effect mobility of about 0.06 cm2/Vs, an on/off ratio of 106, and a signal propagation delay of 17 μs per stage have been obtained.

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BT - 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014

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Y2 - 28 September 2014 through 1 October 2014

ER -

Zschieschang U, Rodel R, Kraft U, Takimiya K, Zaki T, Letzkus F et al. Low-voltage organic field-effect transistors for flexible electronics. In 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 100-106. 6981295. (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). doi: 10.1109/BCTM.2014.6981295

Low-voltage organic field-effect transistors for flexible electronics

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