Low-voltage PZT-actuated MEMS switch monolithically integrated with CMOS circuit

Matsuo Kousuke; Masaaki Moriyama; Masayoshi Esashi; Shuji Tanaka

doi:10.1109/MEMSYS.2012.6170367

Low-voltage PZT-actuated MEMS switch monolithically integrated with CMOS circuit

Matsuo Kousuke, Masaaki Moriyama, Masayoshi Esashi, Shuji Tanaka

Tohoku University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

23 Citations (Scopus)

Abstract

MEMS switches actuated by PZT at low voltage were integrated with 0.35 μm CMOS. A preliminary test confirmed that the switch and the CMOS circuit worked well. PZT must be deposited at high temperature, and thus not CMOS-compatible. To overcome this limitation, we fabricated switch structures on a Si dummy wafer using PZT sol-gel method, and then transferred them to the CMOS wafer by polymer bonding. After the dummy wafer was removed, the switch structure and the CMOS circuit were connected by Au electroplating. Finally, the polymer was sacrificially etched by O ₂ plasma to release the switches.

Original language	English
Title of host publication	2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012
Pages	1153-1156
Number of pages	4
DOIs	https://doi.org/10.1109/MEMSYS.2012.6170367
Publication status	Published - 2012
Event	2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012 - Paris, France Duration: 2012 Jan 29 → 2012 Feb 2

Publication series

Name	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN (Print)	1084-6999

Conference

Conference	2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012
Country/Territory	France
City	Paris
Period	12/1/29 → 12/2/2

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10.1109/MEMSYS.2012.6170367

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Kousuke, M., Moriyama, M., Esashi, M., & Tanaka, S. (2012). Low-voltage PZT-actuated MEMS switch monolithically integrated with CMOS circuit. In 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012 (pp. 1153-1156). Article 6170367 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). https://doi.org/10.1109/MEMSYS.2012.6170367

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title = "Low-voltage PZT-actuated MEMS switch monolithically integrated with CMOS circuit",

abstract = "MEMS switches actuated by PZT at low voltage were integrated with 0.35 μm CMOS. A preliminary test confirmed that the switch and the CMOS circuit worked well. PZT must be deposited at high temperature, and thus not CMOS-compatible. To overcome this limitation, we fabricated switch structures on a Si dummy wafer using PZT sol-gel method, and then transferred them to the CMOS wafer by polymer bonding. After the dummy wafer was removed, the switch structure and the CMOS circuit were connected by Au electroplating. Finally, the polymer was sacrificially etched by O 2 plasma to release the switches.",

author = "Matsuo Kousuke and Masaaki Moriyama and Masayoshi Esashi and Shuji Tanaka",

year = "2012",

doi = "10.1109/MEMSYS.2012.6170367",

language = "English",

isbn = "9781467303248",

series = "Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)",

pages = "1153--1156",

booktitle = "2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012",

note = "2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012 ; Conference date: 29-01-2012 Through 02-02-2012",

}

Kousuke, M, Moriyama, M, Esashi, M & Tanaka, S 2012, Low-voltage PZT-actuated MEMS switch monolithically integrated with CMOS circuit. in 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012., 6170367, Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), pp. 1153-1156, 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012, Paris, France, 12/1/29. https://doi.org/10.1109/MEMSYS.2012.6170367

Low-voltage PZT-actuated MEMS switch monolithically integrated with CMOS circuit. / Kousuke, Matsuo; Moriyama, Masaaki; Esashi, Masayoshi et al.
2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012. 2012. p. 1153-1156 6170367 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - MEMS switches actuated by PZT at low voltage were integrated with 0.35 μm CMOS. A preliminary test confirmed that the switch and the CMOS circuit worked well. PZT must be deposited at high temperature, and thus not CMOS-compatible. To overcome this limitation, we fabricated switch structures on a Si dummy wafer using PZT sol-gel method, and then transferred them to the CMOS wafer by polymer bonding. After the dummy wafer was removed, the switch structure and the CMOS circuit were connected by Au electroplating. Finally, the polymer was sacrificially etched by O 2 plasma to release the switches.

AB - MEMS switches actuated by PZT at low voltage were integrated with 0.35 μm CMOS. A preliminary test confirmed that the switch and the CMOS circuit worked well. PZT must be deposited at high temperature, and thus not CMOS-compatible. To overcome this limitation, we fabricated switch structures on a Si dummy wafer using PZT sol-gel method, and then transferred them to the CMOS wafer by polymer bonding. After the dummy wafer was removed, the switch structure and the CMOS circuit were connected by Au electroplating. Finally, the polymer was sacrificially etched by O 2 plasma to release the switches.

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BT - 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012

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Kousuke M, Moriyama M, Esashi M, Tanaka S. Low-voltage PZT-actuated MEMS switch monolithically integrated with CMOS circuit. In 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012. 2012. p. 1153-1156. 6170367. (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). doi: 10.1109/MEMSYS.2012.6170367

Low-voltage PZT-actuated MEMS switch monolithically integrated with CMOS circuit

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