Low Vt Ni-FUSI CMOS technology using a DyO cap layer with either single or dual Ni-phases

H. Y. Yu, S. Z. Chang, A. Veloso, A. Lauwers, C. Adelmann, B. Onsia, S. Van Elshocht, R. Singanamalla, M. Demand, R. Vos, T. Kauerauf, S. Brus, X. Shi, S. Kubicek, C. Vrancken, R. Mitsuhashi, P. Lehnen, J. Kittl, M. Niwa, K. M. YinT. Hoffmann, S. Degendt, M. Jurczak, P. Absil, S. Biesemans

Research output: Contribution to journal › Conference article › peer-review

19 Citations (Scopus)

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