Low work function LaB6 thin films prepared by nitrogen doped LaB6 target sputtering

H. Ishii; K. Takahashi; T. Goto; S. Sugawa; T. Ohmi

doi:10.1149/06641.0023ecst

Low work function LaB₆ thin films prepared by nitrogen doped LaB₆ target sputtering

H. Ishii, K. Takahashi, T. Goto, S. Sugawa, T. Ohmi

New Industry Creation Hatchery Center (NICHe)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

15 Citations (Scopus)

Abstract

Sputtering deposition of LaB₆ thin film was developed, and work function of the sputtered LaB₆ film was investigated. It was found that the work function depends greatly on the nitrogen and the oxygen concentrations in the LaB₆ sputtering target. Low work function of 2.4 eV was obtained in the case of nitrogen concentration of approximately 0.4%. At the same time, the oxygen concentration must be less than 1% to obtain low work function. In this condition, the it was found from the Hall measurement results that the sputtered LaB₆ film exhibited both the highest electron mobility (1.5 cm²/Vs) and the highest electron density (3.3×1022 cm^-3), suggesting that orderliness between atoms was improved at this condition, resulting in the realization of low work function.

Original language	English
Title of host publication	Solid State Topics General Session
Editors	K. B. Sundaram, O. M. Leonte, G. W. Hunter, K. Shimamura, H. Iwai
Publisher	Electrochemical Society Inc.
Pages	23-28
Number of pages	6
Edition	41
ISBN (Electronic)	9781607686644
DOIs	https://doi.org/10.1149/06641.0023ecst
Publication status	Published - 2015
Event	Symposium on Solid State Topics General Session - 227th ECS Meeting - Chicago, United States Duration: 2015 May 24 → 2015 May 28

Publication series

Name	ECS Transactions
Number	41
Volume	66
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on Solid State Topics General Session - 227th ECS Meeting
Country/Territory	United States
City	Chicago
Period	15/5/24 → 15/5/28

Access to Document

10.1149/06641.0023ecst

Cite this

Ishii, H., Takahashi, K., Goto, T., Sugawa, S., & Ohmi, T. (2015). Low work function LaB₆ thin films prepared by nitrogen doped LaB₆ target sputtering. In K. B. Sundaram, O. M. Leonte, G. W. Hunter, K. Shimamura, & H. Iwai (Eds.), Solid State Topics General Session (41 ed., pp. 23-28). (ECS Transactions; Vol. 66, No. 41). Electrochemical Society Inc.. https://doi.org/10.1149/06641.0023ecst

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abstract = "Sputtering deposition of LaB6 thin film was developed, and work function of the sputtered LaB6 film was investigated. It was found that the work function depends greatly on the nitrogen and the oxygen concentrations in the LaB6 sputtering target. Low work function of 2.4 eV was obtained in the case of nitrogen concentration of approximately 0.4%. At the same time, the oxygen concentration must be less than 1% to obtain low work function. In this condition, the it was found from the Hall measurement results that the sputtered LaB6 film exhibited both the highest electron mobility (1.5 cm2/Vs) and the highest electron density (3.3×1022 cm-3), suggesting that orderliness between atoms was improved at this condition, resulting in the realization of low work function.",

author = "H. Ishii and K. Takahashi and T. Goto and S. Sugawa and T. Ohmi",

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publisher = "Electrochemical Society Inc.",

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Ishii, H, Takahashi, K, Goto, T, Sugawa, S & Ohmi, T 2015, Low work function LaB₆ thin films prepared by nitrogen doped LaB₆ target sputtering. in KB Sundaram, OM Leonte, GW Hunter, K Shimamura & H Iwai (eds), Solid State Topics General Session. 41 edn, ECS Transactions, no. 41, vol. 66, Electrochemical Society Inc., pp. 23-28, Symposium on Solid State Topics General Session - 227th ECS Meeting, Chicago, United States, 15/5/24. https://doi.org/10.1149/06641.0023ecst

Low work function LaB₆ thin films prepared by nitrogen doped LaB₆ target sputtering. / Ishii, H.; Takahashi, K.; Goto, T. et al.
Solid State Topics General Session. ed. / K. B. Sundaram; O. M. Leonte; G. W. Hunter; K. Shimamura; H. Iwai. 41. ed. Electrochemical Society Inc., 2015. p. 23-28 (ECS Transactions; Vol. 66, No. 41).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Takahashi, K.

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AU - Ohmi, T.

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N2 - Sputtering deposition of LaB6 thin film was developed, and work function of the sputtered LaB6 film was investigated. It was found that the work function depends greatly on the nitrogen and the oxygen concentrations in the LaB6 sputtering target. Low work function of 2.4 eV was obtained in the case of nitrogen concentration of approximately 0.4%. At the same time, the oxygen concentration must be less than 1% to obtain low work function. In this condition, the it was found from the Hall measurement results that the sputtered LaB6 film exhibited both the highest electron mobility (1.5 cm2/Vs) and the highest electron density (3.3×1022 cm-3), suggesting that orderliness between atoms was improved at this condition, resulting in the realization of low work function.

AB - Sputtering deposition of LaB6 thin film was developed, and work function of the sputtered LaB6 film was investigated. It was found that the work function depends greatly on the nitrogen and the oxygen concentrations in the LaB6 sputtering target. Low work function of 2.4 eV was obtained in the case of nitrogen concentration of approximately 0.4%. At the same time, the oxygen concentration must be less than 1% to obtain low work function. In this condition, the it was found from the Hall measurement results that the sputtered LaB6 film exhibited both the highest electron mobility (1.5 cm2/Vs) and the highest electron density (3.3×1022 cm-3), suggesting that orderliness between atoms was improved at this condition, resulting in the realization of low work function.

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