Lower-current and fast switching of A perpendicular TMR for high speed and high density spin-transfer-torque MRAM

T. Kishi; H. Yoda; T. Kai; T. Nagase; E. Kitagawa; M. Yoshikawa; K. Nishiyama; T. Daibou; M. Nagamine; M. Amano; S. Takahashi; M. Nakayama; N. Shimomura; H. Aikawa; S. Ikegawa; S. Yuasa; K. Yakushiji; H. Kubota; A. Fukushima; M. Oogane; T. Miyazaki; K. Ando

doi:10.1109/IEDM.2008.4796680

Lower-current and fast switching of A perpendicular TMR for high speed and high density spin-transfer-torque MRAM

T. Kishi, H. Yoda, T. Kai, T. Nagase, E. Kitagawa, M. Yoshikawa, K. Nishiyama, T. Daibou, M. Nagamine, M. Amano, S. Takahashi, M. Nakayama, N. Shimomura, H. Aikawa, S. Ikegawa, S. Yuasa, K. Yakushiji, H. Kubota, A. Fukushima, M. OoganeT. Miyazaki, K. Ando

ENG - Applied Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

162 Citations (Scopus)

Abstract

We investigate extremely low programming current and fast switching time of a perpendicular tunnel-magnetoresistance (P-TMR) for spin-transfer torque using a P-TMR cell of 50nm-diameter. A L1₀-crystalline ordered alloy is used as a free layer that has excellent thermal stability and a damping constant of about 0.03. The programming current of 49 uA and the switching time of 4 nsec are also demonstrated.

Original language	English
Title of host publication	2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs	https://doi.org/10.1109/IEDM.2008.4796680
Publication status	Published - 2008
Event	2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States Duration: 2008 Dec 15 → 2008 Dec 17

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2008 IEEE International Electron Devices Meeting, IEDM 2008
Country/Territory	United States
City	San Francisco, CA
Period	08/12/15 → 08/12/17

Access to Document

10.1109/IEDM.2008.4796680

Cite this

Kishi, T., Yoda, H., Kai, T., Nagase, T., Kitagawa, E., Yoshikawa, M., Nishiyama, K., Daibou, T., Nagamine, M., Amano, M., Takahashi, S., Nakayama, M., Shimomura, N., Aikawa, H., Ikegawa, S., Yuasa, S., Yakushiji, K., Kubota, H., Fukushima, A., ... Ando, K. (2008). Lower-current and fast switching of A perpendicular TMR for high speed and high density spin-transfer-torque MRAM. In 2008 IEEE International Electron Devices Meeting, IEDM 2008 Article 4796680 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2008.4796680

@inproceedings{ca5804e1d3a1441fbe6a34eeb0105206,

title = "Lower-current and fast switching of A perpendicular TMR for high speed and high density spin-transfer-torque MRAM",

abstract = "We investigate extremely low programming current and fast switching time of a perpendicular tunnel-magnetoresistance (P-TMR) for spin-transfer torque using a P-TMR cell of 50nm-diameter. A L10-crystalline ordered alloy is used as a free layer that has excellent thermal stability and a damping constant of about 0.03. The programming current of 49 uA and the switching time of 4 nsec are also demonstrated.",

author = "T. Kishi and H. Yoda and T. Kai and T. Nagase and E. Kitagawa and M. Yoshikawa and K. Nishiyama and T. Daibou and M. Nagamine and M. Amano and S. Takahashi and M. Nakayama and N. Shimomura and H. Aikawa and S. Ikegawa and S. Yuasa and K. Yakushiji and H. Kubota and A. Fukushima and M. Oogane and T. Miyazaki and K. Ando",

year = "2008",

doi = "10.1109/IEDM.2008.4796680",

language = "English",

isbn = "9781424423781",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",

note = "2008 IEEE International Electron Devices Meeting, IEDM 2008 ; Conference date: 15-12-2008 Through 17-12-2008",

}

Kishi, T, Yoda, H, Kai, T, Nagase, T, Kitagawa, E, Yoshikawa, M, Nishiyama, K, Daibou, T, Nagamine, M, Amano, M, Takahashi, S, Nakayama, M, Shimomura, N, Aikawa, H, Ikegawa, S, Yuasa, S, Yakushiji, K, Kubota, H, Fukushima, A, Oogane, M, Miyazaki, T & Ando, K 2008, Lower-current and fast switching of A perpendicular TMR for high speed and high density spin-transfer-torque MRAM. in 2008 IEEE International Electron Devices Meeting, IEDM 2008., 4796680, Technical Digest - International Electron Devices Meeting, IEDM, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, United States, 08/12/15. https://doi.org/10.1109/IEDM.2008.4796680

Lower-current and fast switching of A perpendicular TMR for high speed and high density spin-transfer-torque MRAM. / Kishi, T.; Yoda, H.; Kai, T. et al.
2008 IEEE International Electron Devices Meeting, IEDM 2008. 2008. 4796680 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Lower-current and fast switching of A perpendicular TMR for high speed and high density spin-transfer-torque MRAM

AU - Kishi, T.

AU - Yoda, H.

AU - Kai, T.

AU - Nagase, T.

AU - Kitagawa, E.

AU - Yoshikawa, M.

AU - Nishiyama, K.

AU - Daibou, T.

AU - Nagamine, M.

AU - Amano, M.

AU - Takahashi, S.

AU - Nakayama, M.

AU - Shimomura, N.

AU - Aikawa, H.

AU - Ikegawa, S.

AU - Yuasa, S.

AU - Yakushiji, K.

AU - Kubota, H.

AU - Fukushima, A.

AU - Oogane, M.

AU - Miyazaki, T.

AU - Ando, K.

PY - 2008

Y1 - 2008

N2 - We investigate extremely low programming current and fast switching time of a perpendicular tunnel-magnetoresistance (P-TMR) for spin-transfer torque using a P-TMR cell of 50nm-diameter. A L10-crystalline ordered alloy is used as a free layer that has excellent thermal stability and a damping constant of about 0.03. The programming current of 49 uA and the switching time of 4 nsec are also demonstrated.

AB - We investigate extremely low programming current and fast switching time of a perpendicular tunnel-magnetoresistance (P-TMR) for spin-transfer torque using a P-TMR cell of 50nm-diameter. A L10-crystalline ordered alloy is used as a free layer that has excellent thermal stability and a damping constant of about 0.03. The programming current of 49 uA and the switching time of 4 nsec are also demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=64549154395&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=64549154395&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2008.4796680

DO - 10.1109/IEDM.2008.4796680

M3 - Conference contribution

AN - SCOPUS:64549154395

SN - 9781424423781

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2008 IEEE International Electron Devices Meeting, IEDM 2008

T2 - 2008 IEEE International Electron Devices Meeting, IEDM 2008

Y2 - 15 December 2008 through 17 December 2008

ER -

Lower-current and fast switching of A perpendicular TMR for high speed and high density spin-transfer-torque MRAM

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this