LPE growth and scintillation properties of (Zn,Mg)O single crystalline film

Akira Yoshikawa, Takayuki Yanagida, Yutaka Fujimoto, Shunsuke Kurosawa, Yuui Yokota, Akihiro Yamaji, Makoto Sugiyama, Shingo Wakahara, Yoshisuke Futami, Masae Kikuchi, Miyuki Miyamoto, Hideyuki Sekiwa, Martin Nikl

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Among the direct wide band-gap semiconductors, ZnO is an attractive scintillator for alpha particle monitoring. However, the undoped ZnO has a dominant slow luminescence around 500-600 nm due to lattice defects. In this study, the Mg-substituted ZnO ((Zn,Mg)O) single crystalline films with high crystallinity are investigated. Mg doping is found to improve the lattice order and suppress slow luminescent component around 500-600 nm. (Zn,Mg)O single crystalline films were grown by the Liquid Phase Epitaxy (LPE) method. Alpha-ray excited radioluminescence spectra of (Zn,Mg)O film show only one emission peak around 400 nm and decay time of a few nanoseconds. This emission is assigned to free exciton. Light yield of LPE grown (Zn,Mg)O film is evaluated of about 90% of BGO.

Original languageEnglish
Article number6217290
Pages (from-to)2286-2289
Number of pages4
JournalIEEE Transactions on Nuclear Science
Issue number5 PART 2
Publication statusPublished - 2012


  • Crystalline materials
  • epitaxial layers
  • liquid phase epitaxy
  • scintillator
  • semiconductor films


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