TY - JOUR
T1 - LTPS Thin-Film Transistors Fabricated Using New Selective Laser Annealing System
AU - Goto, Tetsuya
AU - Saito, Kaori
AU - Imaizumi, Fuminobu
AU - Hatanaka, Makoto
AU - Takimoto, Masami
AU - Mizumura, Michinobu
AU - Gotoh, Jun
AU - Ikenoue, Hiroshi
AU - Sugawa, Shigetoshi
N1 - Funding Information:
Manuscript received May 2, 2018; accepted May 30, 2018. Date of publication June 25, 2018; date of current version July 23, 2018. This work was supported by Japan Science and Technology Agency NexTEP Program. The review of this paper was arranged by Editor Y. Noh. (Corresponding author: Tetsuya Goto.) T. Goto, F. Imaizumi, and S. Sugawa are with the New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan (e-mail:tetsuya.goto.b2@tohoku.ac.jp). K. Saito, M. Hatanaka, M. Takimoto, M. Mizumura, and J. Gotoh are with V-Technology Company Ltd., Yokohama 240-0005, Japan. H. Ikenoue is with Kyushu University, Fukuoka 819-0395, Japan. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TED.2018.2846412
Publisher Copyright:
© 2018 IEEE.
PY - 2018/8
Y1 - 2018/8
N2 - Selective laser annealing system was developed to realize fabrications of low-temperature poly-Si thin-film transistors (TFTs) even for large substrate, while the conventional excimer laser annealing system has the limitation in substrate size due to the difficulty in obtaining uniform beam line. In this paper, this new system was applied to fabricate poly-Si TFTs, using two laser exposure methods such as the static exposure and the scan exposure. Grain size increased as the laser energy density increased, and TFTs with the field-effect mobility larger than 100 cm2V-1s-1 with the ON- OFF ratio of drain current of approximately 106 could be obtained. Furthermore, for the scan exposure, periodic grain structure was observed resulting from the lateral solidification. In this condition, variations of electrical properties of TFT could be reduced compared to the case of the static exposure.
AB - Selective laser annealing system was developed to realize fabrications of low-temperature poly-Si thin-film transistors (TFTs) even for large substrate, while the conventional excimer laser annealing system has the limitation in substrate size due to the difficulty in obtaining uniform beam line. In this paper, this new system was applied to fabricate poly-Si TFTs, using two laser exposure methods such as the static exposure and the scan exposure. Grain size increased as the laser energy density increased, and TFTs with the field-effect mobility larger than 100 cm2V-1s-1 with the ON- OFF ratio of drain current of approximately 106 could be obtained. Furthermore, for the scan exposure, periodic grain structure was observed resulting from the lateral solidification. In this condition, variations of electrical properties of TFT could be reduced compared to the case of the static exposure.
KW - Excimer laser annealing (ELA)
KW - lateral solidification
KW - low-temperature poly-Si (LTPS)
KW - selective laser annealing (SLA)
KW - thin-film transistor (TFT)
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U2 - 10.1109/TED.2018.2846412
DO - 10.1109/TED.2018.2846412
M3 - Article
AN - SCOPUS:85049067103
SN - 0018-9383
VL - 65
SP - 3250
EP - 3256
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 8
M1 - 8395300
ER -