The red emission properties of Eu doped gallium nitride (GaN) powder prepared by a Na flux method were characterized by time-resolved photoluminescence (PL) and site-selective PL excitation studies. Under above-gap excitation (325 nm), Eu 3+ doped GaN powders exhibited bright red luminescence at ∼622 nm ( 5D 0 → 7F 2 transition). The room-temperature emission lifetime was determined to be ∼242 μs and increased only slightly at 10 K with a value of ∼252 μs. At the same time, the integrated Eu 3+ PL intensity was quenched by a factor of ∼20 for the temperature range from 10 to 300 K. Low temperature PL excitation studies in the region of the 7F 0 → 5D 0 transition of Eu 3+ ions indicated the existence of multiple Eu 3+ centers with distinct excitation and emission properties in GaN:Eu powder.
|Number of pages||5|
|Journal||Physica Status Solidi (A) Applications and Materials Science|
|Publication status||Published - 2011 Jan|
- rare earths