Magnetic and magnetotransport properties of ThCr2Si2-type Ce2O2Bi composed of conducting Bi2− square net and magnetic Ce−O layer

Shunsuke Shibata; Ryosuke Sei; Tomoteru Fukumura; Tetsuya Hasegawa

doi:10.1063/1.4983280

Magnetic and magnetotransport properties of ThCr₂Si₂-type Ce₂O₂Bi composed of conducting Bi²⁻ square net and magnetic Ce−O layer

Shunsuke Shibata, Ryosuke Sei, Tomoteru Fukumura, Tetsuya Hasegawa

SCI - Chemistry

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

ThCr₂Si₂-type Ce₂O₂Bi epitaxial thin films were grown by recently developed multilayer solid phase epitaxy. The ionic state of Ce was confirmed to be 3+ by x-ray photoelectron spectroscopy, corresponding to the electronic configuration of [Xe]4f¹. Electrical resistivity showed the nonmonotonic temperature dependence with a sharp resistivity maximum, concomitant with a magnetization kink at 10 K, suggesting antiferromagnetic transition. In addition, magnetoresistance showed a large angular-dependent magnetoresistance. These results imply that carrier transport in the Bi²⁻ square net could be influenced by magnetic ordering in the Ce−O layer owing to its unique layered structure [Bi²⁻/(Ce₂O₂)²⁺], particularly in the form of epitaxial thin films.

Original language	English
Article number	192410
Journal	Applied Physics Letters
Volume	110
Issue number	19
DOIs	https://doi.org/10.1063/1.4983280
Publication status	Published - 2017 May 8

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title = "Magnetic and magnetotransport properties of ThCr2Si2-type Ce2O2Bi composed of conducting Bi2− square net and magnetic Ce−O layer",

abstract = "ThCr2Si2-type Ce2O2Bi epitaxial thin films were grown by recently developed multilayer solid phase epitaxy. The ionic state of Ce was confirmed to be 3+ by x-ray photoelectron spectroscopy, corresponding to the electronic configuration of [Xe]4f1. Electrical resistivity showed the nonmonotonic temperature dependence with a sharp resistivity maximum, concomitant with a magnetization kink at 10 K, suggesting antiferromagnetic transition. In addition, magnetoresistance showed a large angular-dependent magnetoresistance. These results imply that carrier transport in the Bi2− square net could be influenced by magnetic ordering in the Ce−O layer owing to its unique layered structure [Bi2−/(Ce2O2)2+], particularly in the form of epitaxial thin films.",

author = "Shunsuke Shibata and Ryosuke Sei and Tomoteru Fukumura and Tetsuya Hasegawa",

note = "Funding Information: The XPS measurement was conducted at the Research Hub for Advanced Nano Characterization, The University of Tokyo, under the support of Nanotechnology Platform by MEXT, Japan (No. 12024046). This research was in part supported by JSPS KAKENHI (26600091, 26105002) and CREST, JST. Publisher Copyright: {\textcopyright} 2017 Author(s).",

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doi = "10.1063/1.4983280",

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T1 - Magnetic and magnetotransport properties of ThCr2Si2-type Ce2O2Bi composed of conducting Bi2− square net and magnetic Ce−O layer

AU - Shibata, Shunsuke

AU - Sei, Ryosuke

AU - Fukumura, Tomoteru

AU - Hasegawa, Tetsuya

N1 - Funding Information: The XPS measurement was conducted at the Research Hub for Advanced Nano Characterization, The University of Tokyo, under the support of Nanotechnology Platform by MEXT, Japan (No. 12024046). This research was in part supported by JSPS KAKENHI (26600091, 26105002) and CREST, JST. Publisher Copyright: © 2017 Author(s).

PY - 2017/5/8

Y1 - 2017/5/8

N2 - ThCr2Si2-type Ce2O2Bi epitaxial thin films were grown by recently developed multilayer solid phase epitaxy. The ionic state of Ce was confirmed to be 3+ by x-ray photoelectron spectroscopy, corresponding to the electronic configuration of [Xe]4f1. Electrical resistivity showed the nonmonotonic temperature dependence with a sharp resistivity maximum, concomitant with a magnetization kink at 10 K, suggesting antiferromagnetic transition. In addition, magnetoresistance showed a large angular-dependent magnetoresistance. These results imply that carrier transport in the Bi2− square net could be influenced by magnetic ordering in the Ce−O layer owing to its unique layered structure [Bi2−/(Ce2O2)2+], particularly in the form of epitaxial thin films.

AB - ThCr2Si2-type Ce2O2Bi epitaxial thin films were grown by recently developed multilayer solid phase epitaxy. The ionic state of Ce was confirmed to be 3+ by x-ray photoelectron spectroscopy, corresponding to the electronic configuration of [Xe]4f1. Electrical resistivity showed the nonmonotonic temperature dependence with a sharp resistivity maximum, concomitant with a magnetization kink at 10 K, suggesting antiferromagnetic transition. In addition, magnetoresistance showed a large angular-dependent magnetoresistance. These results imply that carrier transport in the Bi2− square net could be influenced by magnetic ordering in the Ce−O layer owing to its unique layered structure [Bi2−/(Ce2O2)2+], particularly in the form of epitaxial thin films.

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Magnetic and magnetotransport properties of ThCr₂Si₂-type Ce₂O₂Bi composed of conducting Bi²⁻ square net and magnetic Ce−O layer

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