TY - JOUR
T1 - Magnetic and structural properties of MnRh thin Films
AU - Chaturvedi, Anurag
AU - Sepehri-Amin, Hossein
AU - Ohkubo, Tadakatsu
AU - Hono, Kazuhiro
AU - Suzuki, Takao
N1 - Funding Information:
This work was partially supported by National Science Foundation for the G8 project (NSF- CMMI #1229049 ). One of the authors A.C. was grateful for the support by the University of Alabama’s postdoctoral fellowship .
Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.
PY - 2016/3/1
Y1 - 2016/3/1
N2 - A systematic study of magnetic and structural properties of MnRh thin films fabricated by sputter-deposition onto silica glass has been conducted. The MnRh thin films are found to be of the CsCl-type structure, and ferromagnetic at room temperature. The MnRh thin film undergoes the magnetic phase transition between antiferromagnetic and ferromagnetic states at a temperature around 175 K and 310 K during the cooling and heating process, respectively. The temperature dependence of the magnetization shows a thermal hysteresis of about 120 K. An exchange bias field of about 450 Oe at 5 K was observed with the coercivity of 900 Oe and unidirectional anisotropy constant of about 0.45 erg/cm2. The magnetic field dependence of M-T shows that the transition temperature of about 230 K remains unchanged with increasing field during the temperature variation process. A detailed STEM-EDS analysis indicates a non-uniform compositional distribution of Mn and Rh with an average composition of Mn58Rh42 at%. A high resolution STEM-HAADF analysis reveals the compositional variations within the CsCl-type MnRh grains. It is proposed that the origin of exchange bias effect is resulted from the exchange coupling between the ferromagnetic region with Mn-rich and the antiferromagnetic region with nearly the equiatomic composition.
AB - A systematic study of magnetic and structural properties of MnRh thin films fabricated by sputter-deposition onto silica glass has been conducted. The MnRh thin films are found to be of the CsCl-type structure, and ferromagnetic at room temperature. The MnRh thin film undergoes the magnetic phase transition between antiferromagnetic and ferromagnetic states at a temperature around 175 K and 310 K during the cooling and heating process, respectively. The temperature dependence of the magnetization shows a thermal hysteresis of about 120 K. An exchange bias field of about 450 Oe at 5 K was observed with the coercivity of 900 Oe and unidirectional anisotropy constant of about 0.45 erg/cm2. The magnetic field dependence of M-T shows that the transition temperature of about 230 K remains unchanged with increasing field during the temperature variation process. A detailed STEM-EDS analysis indicates a non-uniform compositional distribution of Mn and Rh with an average composition of Mn58Rh42 at%. A high resolution STEM-HAADF analysis reveals the compositional variations within the CsCl-type MnRh grains. It is proposed that the origin of exchange bias effect is resulted from the exchange coupling between the ferromagnetic region with Mn-rich and the antiferromagnetic region with nearly the equiatomic composition.
KW - Exchange bias effect
KW - First order transition
KW - MnRh
KW - Thin film
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U2 - 10.1016/j.jmmm.2015.10.027
DO - 10.1016/j.jmmm.2015.10.027
M3 - Article
AN - SCOPUS:84944406543
SN - 0304-8853
VL - 401
SP - 144
EP - 149
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
ER -