Magnetic anisotropy in a ferromagnetic (Ga,Mn)Sb thin film

Y. Nishitani, M. Endo, F. Matsukura, H. Ohno

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


We have grown a 5-nm-thick (Ga,Mn)Sb with Mn composition of 0.032, and investigated its magnetic properties and their electric-field dependence. The sample shows ferromagnetism below about 25 K, whose magnetic easy axis is perpendicular to plane. By utilizing a field-effect transistor structure, we show that the Curie temperature and magnetic anisotropy field can be controlled by the application of electric field.

Original languageEnglish
Pages (from-to)2681-2684
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number10
Publication statusPublished - 2010 Sept


  • Field-effect transistor
  • Magnetic anisotropy
  • Magnetic semiconductor


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