TY - JOUR
T1 - Magnetic anisotropy of doped Cr2O3antiferromagnetic films evaluated by utilizing parasitic magnetization
AU - Nozaki, Tomohiro
AU - Al-Mahdawi, Muftah
AU - Shiokawa, Yohei
AU - Pati, Satya Prakash
AU - Imamura, Hiroshi
AU - Sahashi, Masashi
N1 - Funding Information:
This work was partly supported by the Center for Science and Innovation in Spintronics (CSIS), Center for Spintronics Research Network (CSRN), Tohoku University, JSPS KAKENHI (Grant No. 16H05975), and the ImPACT Program of the Council for Science, Technology and Innovation (Cabinet Office, Government of Japan).
Publisher Copyright:
© 2020 Author(s).
PY - 2020/7/14
Y1 - 2020/7/14
N2 - In Cr2O3 thin films doped with Al or Ir, we have discovered a parasitic magnetization, accompanied by the antiferromagnetic order, with tunable direction and magnitude. In this study, by utilizing the parasitic magnetization, the antiferromagnetic anisotropy KAF of the doped Cr2O3 thin films was evaluated. A much greater improvement of KAF was obtained for Al-doped Cr2O3 films than that of bulk. The maximum KAF in this study was ∼9 × 104 J/m3, obtained for the Al 3.7%-doped Cr2O3 film sample. The enhancement of the magnetic dipole anisotropy KMD due to the site-selective substitution is speculated for the dominant origin of the enhancement. Furthermore, based on the obtained KAF, the influence of the parasitic magnetization on the exchange bias blocking temperature TB of the doped-Cr2O3/Co exchange coupled system was discussed. TB greatly increases when the parasitic magnetization is coupled antiparallel to ferromagnetic moment, such as Al-doped Cr2O3/Co systems.
AB - In Cr2O3 thin films doped with Al or Ir, we have discovered a parasitic magnetization, accompanied by the antiferromagnetic order, with tunable direction and magnitude. In this study, by utilizing the parasitic magnetization, the antiferromagnetic anisotropy KAF of the doped Cr2O3 thin films was evaluated. A much greater improvement of KAF was obtained for Al-doped Cr2O3 films than that of bulk. The maximum KAF in this study was ∼9 × 104 J/m3, obtained for the Al 3.7%-doped Cr2O3 film sample. The enhancement of the magnetic dipole anisotropy KMD due to the site-selective substitution is speculated for the dominant origin of the enhancement. Furthermore, based on the obtained KAF, the influence of the parasitic magnetization on the exchange bias blocking temperature TB of the doped-Cr2O3/Co exchange coupled system was discussed. TB greatly increases when the parasitic magnetization is coupled antiparallel to ferromagnetic moment, such as Al-doped Cr2O3/Co systems.
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U2 - 10.1063/5.0009353
DO - 10.1063/5.0009353
M3 - Article
AN - SCOPUS:85090011510
SN - 0021-8979
VL - 128
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 2
M1 - 023901
ER -