TY - GEN
T1 - Magnetic anisotropy, sress, and martensitic transformation in Ni-Mn-Ga thin films on Si(100) wafer
AU - Hagler, Michael
AU - Chernenko, Volodymyr A.
AU - Ohtsuka, Makoto
AU - Besseghini, Stefano
AU - Milliner, Peter
PY - 2007
Y1 - 2007
N2 - Ni-Mn-Ga magnetic shape memory alloys (MSMAs) tend to undergo a large deformation upon the application of a magnetic field. This deformation is attributed to twin boundary motion in the martensitic phase. In an effort to harness the shape memory effect for use in sensors, actuators, and micro-devices, the behavior of Ni-Mn-Ga thin films is attracting attention. Substrate curvature measurements were done with Ni-Mn-Ga films with a thickness of 2.0 urn sputter-deposited on Si(100) wafer having amorphous 500 nm thick SiNx buffer layer. During the wafer bow curvature measurements, stress levels of 0.65 GPa were attained. The martensitic transformation is manifested by a stress-temperature hysteretic loop. Measurements of magnetization curves were carried out on Ni-Mn-Ga films with thickness between 0.5 and 3.0 nm. A change of the magnetization behavior from the easy-plane type for thin films to the out-of-plane easy-axis type for thick films is observed. This effect is caused by the interplay between different contributions to the overall anisotropy of film.
AB - Ni-Mn-Ga magnetic shape memory alloys (MSMAs) tend to undergo a large deformation upon the application of a magnetic field. This deformation is attributed to twin boundary motion in the martensitic phase. In an effort to harness the shape memory effect for use in sensors, actuators, and micro-devices, the behavior of Ni-Mn-Ga thin films is attracting attention. Substrate curvature measurements were done with Ni-Mn-Ga films with a thickness of 2.0 urn sputter-deposited on Si(100) wafer having amorphous 500 nm thick SiNx buffer layer. During the wafer bow curvature measurements, stress levels of 0.65 GPa were attained. The martensitic transformation is manifested by a stress-temperature hysteretic loop. Measurements of magnetization curves were carried out on Ni-Mn-Ga films with thickness between 0.5 and 3.0 nm. A change of the magnetization behavior from the easy-plane type for thin films to the out-of-plane easy-axis type for thick films is observed. This effect is caused by the interplay between different contributions to the overall anisotropy of film.
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U2 - 10.1557/proc-998-j06-09
DO - 10.1557/proc-998-j06-09
M3 - Conference contribution
AN - SCOPUS:70349944332
SN - 9781605604312
T3 - Materials Research Society Symposium Proceedings
SP - 109
EP - 114
BT - Materials Research Society Symposium Proceedings - Nanoscale Magnetics and Device Applications
PB - Materials Research Society
T2 - Nanoscale Magnetics and Device Applications - 2007 MRS Spring Meeting
Y2 - 9 April 2007 through 13 April 2007
ER -