TY - JOUR
T1 - Magnetic domain structure of a ferromagnetic semiconductor (Ga,Mn)As observed with scanning probe microscopes
AU - Fukumura, T.
AU - Shono, T.
AU - Inaba, K.
AU - Hasegawa, T.
AU - Koinuma, H.
AU - Matsukura, F.
AU - Ohno, H.
N1 - Funding Information:
T.H. is also at CREST of the Japan Science and Technology Corporation, Japan. H.O. and F.M. are supported by the Japan Society for the Promotion of Science and by the Ministry of Education, Japan.
PY - 2001/5
Y1 - 2001/5
N2 - Magnetic domain structure of a ferromagnetic semiconductor, (Ga,Mn)As, is observed with a scanning Hall probe microscope and a scanning SQUID microscope at low temperature. The film with perpendicular magnetization has a maze pattern domain structure similar to those of conventional ferromagnetic materials, whereas the film with in-plane magnetization has unconventional domain structure that show random arrangement of the domains.
AB - Magnetic domain structure of a ferromagnetic semiconductor, (Ga,Mn)As, is observed with a scanning Hall probe microscope and a scanning SQUID microscope at low temperature. The film with perpendicular magnetization has a maze pattern domain structure similar to those of conventional ferromagnetic materials, whereas the film with in-plane magnetization has unconventional domain structure that show random arrangement of the domains.
KW - (Ga,Mn)As
KW - Magnetic domains
KW - Scanning Hall probe microscope
KW - Scanning SQUID microscope
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U2 - 10.1016/S1386-9477(01)00068-6
DO - 10.1016/S1386-9477(01)00068-6
M3 - Article
AN - SCOPUS:0035339436
SN - 1386-9477
VL - 10
SP - 135
EP - 138
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
IS - 1-3
ER -