TY - JOUR
T1 - Magnetic, electrical properties, and structure of Cr-AlN and Mn-AlN thin films grown on Si substrates
AU - Endo, Yasushi
AU - Sato, Takanobu
AU - Takita, Ayumu
AU - Kawamura, Yoshio
AU - Yamamoto, Masahiko
N1 - Funding Information:
This work was supported in part by a Grant-in-Aid for Scientific Research (S) and Encouragement of Young Scientists (B) from the Japanese Ministry of Education, Culture, Sports, Science and Technology. This work was also supported in part by “Priority Assistance of the Formation of Worldwide Renowned Centers of Research—The 21st Century COE program (Project: Center of Excellence for Advanced Structural and Functional Materials Design)” from the Japanese Ministry of Education, Culture, Sports, Science and Technology. The authors would like to thank Prof. Fujimoto for XPS measurements of the composition of specimens.
PY - 2005/10
Y1 - 2005/10
N2 - We have studied magnetic, electrical properties, and structure of Cr-AlN and Mn-AlN thin films grown on the Si substrates. Each magnetic state in Al 0.93Cr0.07N and Al0.91Mn0.09N thin films changes from a paramagnetic state to a superparamagnetic state as temperature decreases. Room temperature (RT) ferromagnetism cannot be observed in each thin film. Each electrical property in Al0.93Cr 0.07N and Al0.91Mn0.09N thin films becomes semiconducting, since the electrical resistivities of these thin films are higher than 107μΩ·cm at RT. At 77 K, tunneling phenomena for the Al0.93Cr0.07N thin film and rectification for the Al0.91Mn0.09N thin film can be observed. Furthermore, the crystal structure in each thin film is also a polycrystalline structure with the preferential orientation of hep (0001).
AB - We have studied magnetic, electrical properties, and structure of Cr-AlN and Mn-AlN thin films grown on the Si substrates. Each magnetic state in Al 0.93Cr0.07N and Al0.91Mn0.09N thin films changes from a paramagnetic state to a superparamagnetic state as temperature decreases. Room temperature (RT) ferromagnetism cannot be observed in each thin film. Each electrical property in Al0.93Cr 0.07N and Al0.91Mn0.09N thin films becomes semiconducting, since the electrical resistivities of these thin films are higher than 107μΩ·cm at RT. At 77 K, tunneling phenomena for the Al0.93Cr0.07N thin film and rectification for the Al0.91Mn0.09N thin film can be observed. Furthermore, the crystal structure in each thin film is also a polycrystalline structure with the preferential orientation of hep (0001).
KW - Cr-AlN thin film
KW - Dilute magnetic semiconductor
KW - Mn-AlN thin film
KW - Room temperature ferromagnetism
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U2 - 10.1109/TMAG.2005.854686
DO - 10.1109/TMAG.2005.854686
M3 - Article
AN - SCOPUS:27744565834
SN - 0018-9464
VL - 41
SP - 2718
EP - 2720
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
IS - 10
ER -