Mobile communication traffic is continuously doubling in recent years.
|Title of host publication||2017 IEEE International Magnetics Conference, INTERMAG 2017|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Publication status||Published - 2017 Aug 10|
|Event||2017 IEEE International Magnetics Conference, INTERMAG 2017 - Dublin, Ireland|
Duration: 2017 Apr 24 → 2017 Apr 28
|Name||2017 IEEE International Magnetics Conference, INTERMAG 2017|
|Conference||2017 IEEE International Magnetics Conference, INTERMAG 2017|
|Period||17/4/24 → 17/4/28|
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2017 IEEE International Magnetics Conference, INTERMAG 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 8007611 (2017 IEEE International Magnetics Conference, INTERMAG 2017).
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
TY - GEN
T1 - Magnetic integrated passives for information and communication technology
AU - Yamaguchi, M.
AU - Tanaka, S.
AU - Ma, J.
AU - Miyazawa, Y.
AU - Sato, M.
AU - Nishizawa, M.
AU - Nagata, M.
AU - Ishiyama, K.
AU - Kondo, K.
AU - Okiyoneda, Y.
N1 - Funding Information: INTRODUCTION Mobile communication traffic is continuously doubling in recent years. This paper discusses the state-of the-art of semiconductor-integrated magnetic flux control in frequency and space domains to innovate fast and reliable telecommunication technology. INTEGRATED HIGH-Q INDUCTOR Ferromagnetic integrated inductor was firstly proposed for low noise amplifier(LNA) implemented in RF IC for mobile handset, demonstrating simultaneous enhancement of inductance L and quality factor Q at 1 GHz . Material used was amorphous Co-Zr-Nb and later granular Fe-Al-O films. After a number of studies  it was claimed that the degree of L and Q enhancement is severely constrained by the tradeoff between the inductance gain and the resistance increase in the GHz range . Development of higher FMR frequency material with high resistivity and process compatibility with IC are in challenge. On the other hand, MHz-switching power supply on chip (PwrSoc) for mobile and IoT applications is free from the FMR restriction, and studied much in power electronics community . Coupled inductors and transformers are extensively studied. Foundry service of magnetic inductor is now available on market . Coupled inductors and transformers are extensively studied. Foundry service of magnetic inductor is now available on market . EMBEDDED NOISE SUPPRESSOR Much attention has been paid to avoid intra-noise coupling in the RF IC so as not to desensitize the RF receiver chain in mobile handset since RF IC is implemented with millions of RF digital gates after LTE (Long Term Evolution, or 3.9G) era. The 3GPP (Third Generation Partnership Project, mobile communication standard) stipulates that the minimum mean power applied to antenna ports (REFSENS hereafter) at which the throughput shall meet or exceed the minimum receiving sensitivity in the 5 MHz band of popular Band 1 and 19 is -100 dBm / 5 MHz where the throughput shall be ≥ 95% . Fig. 1 shows the way to deposit magnetic film on to the passivation of IC chip. It greatly improves immunity to conductive intra noise attack from digital to analogue circuits, namely digital noise. Ferromagnetic resonance (FMR) losses well suppresses the conductive noise around FMR frequency range. The magnetic film acts as a resistive band elimination filter . Gilbert dumping factor(α) tunes trade-off between frequency bandwidth and peak level of noise attenuation. On-chip current-carrying wire generates local magnetic field, and corresponding demagnetization. Hence the degree of FMR frequency shift becomes a function of on-chip wiring design. A stack of SiO2 (100 nm) / [Co-Zr-Nb (250 nm)/ SiO2 (5 nm)]×4 / SiO2 (100 nm)/[Co-Zr-Nb (250 nm)/ SiO2 (5 nm)]×4 / SiO2 (50 nm) (/ Glass substrate) was sputter-deposited and lifted-off on to the test chip, where the two [Co-Zr-Nb/ SiO2] ×4 stacks form crossed-anisotropy multilayer structure for isotropic noise suppression in the film plane. The magnetic film well suppressed the in-band spurious tone (noise) by 10 dB, whereas the magnetic film will not suppress the signal as the REFSENS was improved by 8 dB . This was achieved by the frequency and space domain separation of the signal and noise, respectively. More noise suppression is possible by appropriate magnetic film patterning . In the near field where the distance from noise source to noise victim is less than a wavelength, major source of radiated emission is leakage flux from fast switching current in the IC. The radiated emission can be shielded and accordingly external electronics are protected from the noise problem by more than 10 dB . Similarly, an IC chip can be protected from external electromagnetic noise by the magnetic shielding. Electric conductivity of magnetic film helps these functionality . Fig. 2 explains that fast-switching power-electronic inverter equipment is another major source of radiated emission that conflicts with telecommunication frequency bands in the GHz range. The REFSENS will not meet the 3GPP requirement when the receiver circuit was subjected to the harmonics from a 3 kW class SiC wireless power transmission (WPT) inverter at a distance of 200 mm . Noise suppression sheet  for high power fast switching inverter is expected. Once the noise is injected to the receiver, embedded magnetic layer for interposer to RF IC is useful to improve the immunity to the noise. MEASUREMENT METHODOLOGY A 60 x 60 μm2 planar shielded loop probe  was developed in combination with 3D scanner to trace the on-chip noise propagation route at 2 GHz rangel. HF-MFM is usable to detect on-chip RF current in principle . RF magneto-optical handy probe is under development to achieve noninvasive magnetic near field measurements . Emulation-simulation coupled diagnosis system has been developed to obtain REFSENS , and being improved to predict communication performance under the inverter noise. New thin film permeameters for >10 GHz measurement have been developed by the two co-operative research groups , . Acknowledgment: The authors are grateful to Profs. H. Matsuki and Y. Endo, Tohoku Univ., Mr. H. Matsui, Renesas Electronics Co., and Dr. M. Iwanami, NEC Co. This work was supported in part by Development of Technical Examination Services Concerning Frequency Crowding, MIC Japan, μSIC & RIEC Cooperative Research Project Tohoku Univ., and Bilateral Joint Research Project by JSPS-DST. Publisher Copyright: © 2017 IEEE.
PY - 2017/8/10
Y1 - 2017/8/10
N2 - Mobile communication traffic is continuously doubling in recent years.
AB - Mobile communication traffic is continuously doubling in recent years.
UR - http://www.scopus.com/inward/record.url?scp=85034668427&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85034668427&partnerID=8YFLogxK
U2 - 10.1109/INTMAG.2017.8007611
DO - 10.1109/INTMAG.2017.8007611
M3 - Conference contribution
AN - SCOPUS:85034668427
T3 - 2017 IEEE International Magnetics Conference, INTERMAG 2017
BT - 2017 IEEE International Magnetics Conference, INTERMAG 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2017 IEEE International Magnetics Conference, INTERMAG 2017
Y2 - 24 April 2017 through 28 April 2017