Magnetic properties of L2 1-structured Co 2 (Cr,Fe)Al films grown on GaAs(001) substrates

A. Hirohata; H. Kurebayashi; S. Okamura; T. Masaki; T. Nozaki; M. Kikuchi; N. Tezuka; K. Inomata; J. S. Claydon; Y. B. Xu

doi:10.1063/1.1854256

Magnetic properties of L2 ₁-structured Co ₂ (Cr,Fe)Al films grown on GaAs(001) substrates

A. Hirohata, H. Kurebayashi, S. Okamura, T. Masaki, T. Nozaki, M. Kikuchi, N. Tezuka, K. Inomata, J. S. Claydon, Y. B. Xu

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Both polycrystalline Co2 CrAl and epitaxial Co2 FeAl full Heusler alloy thin films with the perfectly ordered L 21 structure have been grown onto GaAs(001) substrates at 673 K. The Co2 FeAl films, in particular, consist of an almost single phase with the crystalline relationship of Co2 FeAl (001) 〈110〉 ∥GaAs (001) 〈110〉. The element specific magnetic moment per Co atom is found to agree well with the theoretical calculation, while that per Fe atom is decreased. By substituting the Fe with Cr atoms, Co2 (Cr,Fe) Al films can preserve these ideal properties and can show half metallicity at room temperature.

Original language	English
Article number	10C308
Journal	Journal of Applied Physics
Volume	97
Issue number	10
DOIs	https://doi.org/10.1063/1.1854256
Publication status	Published - 2005 May 15

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.1854256

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title = "Magnetic properties of L2 1-structured Co 2 (Cr,Fe)Al films grown on GaAs(001) substrates",

abstract = "Both polycrystalline Co2 CrAl and epitaxial Co2 FeAl full Heusler alloy thin films with the perfectly ordered L 21 structure have been grown onto GaAs(001) substrates at 673 K. The Co2 FeAl films, in particular, consist of an almost single phase with the crystalline relationship of Co2 FeAl (001) 〈110〉 ∥GaAs (001) 〈110〉. The element specific magnetic moment per Co atom is found to agree well with the theoretical calculation, while that per Fe atom is decreased. By substituting the Fe with Cr atoms, Co2 (Cr,Fe) Al films can preserve these ideal properties and can show half metallicity at room temperature.",

author = "A. Hirohata and H. Kurebayashi and S. Okamura and T. Masaki and T. Nozaki and M. Kikuchi and N. Tezuka and K. Inomata and Claydon, {J. S.} and Xu, {Y. B.}",

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T1 - Magnetic properties of L2 1-structured Co 2 (Cr,Fe)Al films grown on GaAs(001) substrates

AU - Hirohata, A.

AU - Kurebayashi, H.

AU - Okamura, S.

AU - Masaki, T.

AU - Nozaki, T.

AU - Kikuchi, M.

AU - Tezuka, N.

AU - Inomata, K.

AU - Claydon, J. S.

AU - Xu, Y. B.

N1 - Funding Information: This work was supported by a Grant-in Aid for Scientific Research (A) 15206074 and IT-Program RR 2002 from MEXT.

PY - 2005/5/15

Y1 - 2005/5/15

N2 - Both polycrystalline Co2 CrAl and epitaxial Co2 FeAl full Heusler alloy thin films with the perfectly ordered L 21 structure have been grown onto GaAs(001) substrates at 673 K. The Co2 FeAl films, in particular, consist of an almost single phase with the crystalline relationship of Co2 FeAl (001) 〈110〉 ∥GaAs (001) 〈110〉. The element specific magnetic moment per Co atom is found to agree well with the theoretical calculation, while that per Fe atom is decreased. By substituting the Fe with Cr atoms, Co2 (Cr,Fe) Al films can preserve these ideal properties and can show half metallicity at room temperature.

AB - Both polycrystalline Co2 CrAl and epitaxial Co2 FeAl full Heusler alloy thin films with the perfectly ordered L 21 structure have been grown onto GaAs(001) substrates at 673 K. The Co2 FeAl films, in particular, consist of an almost single phase with the crystalline relationship of Co2 FeAl (001) 〈110〉 ∥GaAs (001) 〈110〉. The element specific magnetic moment per Co atom is found to agree well with the theoretical calculation, while that per Fe atom is decreased. By substituting the Fe with Cr atoms, Co2 (Cr,Fe) Al films can preserve these ideal properties and can show half metallicity at room temperature.

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Magnetic properties of L2 ₁-structured Co ₂ (Cr,Fe)Al films grown on GaAs(001) substrates

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