Magnetic properties of X-ray irradiated organic mott insulator -(BEDT-TTF)2Cu[N(CN)2]Cl

Naoki Yoneyama, Ko Furukawa, Toshikazu Nakamura, Takahiko Sasaki, Norio Kobayashi

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12 Citations (Scopus)


We have performed static magnetic susceptibility and ESR measurements on the X-ray-irradiated organic Mott insulator -(BEDT-TTF)2Cu[N(CN)2]Cl. The Néel temperature and the spin-flop transition field decrease with increasing irradiation dose. In the ESR signal at 4 K, a paramagnetic component (15%) from itinerant carriers appears after irradiation in addition to the parent antiferromagnetic (85%) and minor paramagnetic localized spin components. We propose that domains of the itinerant carriers with a size on the ten nanometer scale are induced around the molecular defects randomly introduced by X-ray irradiation.

Original languageEnglish
Article number063706
JournalJournal of the Physical Society of Japan
Issue number6
Publication statusPublished - 2010


  • Carrier doping
  • ESR
  • Mott insulator
  • Static susceptibility
  • X-ray irradiation


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