Magnetic properties of X-ray irradiated organic mott insulator -(BEDT-TTF)2Cu[N(CN)2]Cl

Naoki Yoneyama; Ko Furukawa; Toshikazu Nakamura; Takahiko Sasaki; Norio Kobayashi

doi:10.1143/JPSJ.79.063706

Magnetic properties of X-ray irradiated organic mott insulator -(BEDT-TTF)₂Cu[N(CN)₂]Cl

Naoki Yoneyama, Ko Furukawa, Toshikazu Nakamura, Takahiko Sasaki, Norio Kobayashi

IMR - Materials Property Division

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We have performed static magnetic susceptibility and ESR measurements on the X-ray-irradiated organic Mott insulator -(BEDT-TTF)₂Cu[N(CN)₂]Cl. The Néel temperature and the spin-flop transition field decrease with increasing irradiation dose. In the ESR signal at 4 K, a paramagnetic component (15%) from itinerant carriers appears after irradiation in addition to the parent antiferromagnetic (85%) and minor paramagnetic localized spin components. We propose that domains of the itinerant carriers with a size on the ten nanometer scale are induced around the molecular defects randomly introduced by X-ray irradiation.

Original language	English
Article number	063706
Journal	Journal of the Physical Society of Japan
Volume	79
Issue number	6
DOIs	https://doi.org/10.1143/JPSJ.79.063706
Publication status	Published - 2010

Keywords

BEDT-TTF
Carrier doping
ESR
Mott insulator
Static susceptibility
X-ray irradiation

Access to Document

10.1143/JPSJ.79.063706

Cite this

@article{835164f2fc054db0b32431bc962b3347,

title = "Magnetic properties of X-ray irradiated organic mott insulator -(BEDT-TTF)2Cu[N(CN)2]Cl",

abstract = "We have performed static magnetic susceptibility and ESR measurements on the X-ray-irradiated organic Mott insulator -(BEDT-TTF)2Cu[N(CN)2]Cl. The N{\'e}el temperature and the spin-flop transition field decrease with increasing irradiation dose. In the ESR signal at 4 K, a paramagnetic component (15%) from itinerant carriers appears after irradiation in addition to the parent antiferromagnetic (85%) and minor paramagnetic localized spin components. We propose that domains of the itinerant carriers with a size on the ten nanometer scale are induced around the molecular defects randomly introduced by X-ray irradiation.",

keywords = "BEDT-TTF, Carrier doping, ESR, Mott insulator, Static susceptibility, X-ray irradiation",

author = "Naoki Yoneyama and Ko Furukawa and Toshikazu Nakamura and Takahiko Sasaki and Norio Kobayashi",

note = "Funding Information: This work was supported by Grants-in-Aid for Scientific Research B (Nos. 20340095 and 21110504) from the Japan Society for the Promotion of Science and the Ministry of Education, Culture, Sports, Science and Technology. Publisher Copyright: {\textcopyright} 2010 The Physical Society of Japan.",

year = "2010",

doi = "10.1143/JPSJ.79.063706",

language = "English",

volume = "79",

journal = "Journal of the Physical Society of Japan",

issn = "0031-9015",

publisher = "The Physical Society of Japan",

number = "6",

}

TY - JOUR

T1 - Magnetic properties of X-ray irradiated organic mott insulator -(BEDT-TTF)2Cu[N(CN)2]Cl

AU - Yoneyama, Naoki

AU - Furukawa, Ko

AU - Nakamura, Toshikazu

AU - Sasaki, Takahiko

AU - Kobayashi, Norio

N1 - Funding Information: This work was supported by Grants-in-Aid for Scientific Research B (Nos. 20340095 and 21110504) from the Japan Society for the Promotion of Science and the Ministry of Education, Culture, Sports, Science and Technology. Publisher Copyright: © 2010 The Physical Society of Japan.

PY - 2010

Y1 - 2010

N2 - We have performed static magnetic susceptibility and ESR measurements on the X-ray-irradiated organic Mott insulator -(BEDT-TTF)2Cu[N(CN)2]Cl. The Néel temperature and the spin-flop transition field decrease with increasing irradiation dose. In the ESR signal at 4 K, a paramagnetic component (15%) from itinerant carriers appears after irradiation in addition to the parent antiferromagnetic (85%) and minor paramagnetic localized spin components. We propose that domains of the itinerant carriers with a size on the ten nanometer scale are induced around the molecular defects randomly introduced by X-ray irradiation.

AB - We have performed static magnetic susceptibility and ESR measurements on the X-ray-irradiated organic Mott insulator -(BEDT-TTF)2Cu[N(CN)2]Cl. The Néel temperature and the spin-flop transition field decrease with increasing irradiation dose. In the ESR signal at 4 K, a paramagnetic component (15%) from itinerant carriers appears after irradiation in addition to the parent antiferromagnetic (85%) and minor paramagnetic localized spin components. We propose that domains of the itinerant carriers with a size on the ten nanometer scale are induced around the molecular defects randomly introduced by X-ray irradiation.

KW - BEDT-TTF

KW - Carrier doping

KW - ESR

KW - Mott insulator

KW - Static susceptibility

KW - X-ray irradiation

UR - http://www.scopus.com/inward/record.url?scp=85042580080&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85042580080&partnerID=8YFLogxK

U2 - 10.1143/JPSJ.79.063706

DO - 10.1143/JPSJ.79.063706

M3 - Article

AN - SCOPUS:85042580080

SN - 0031-9015

VL - 79

JO - Journal of the Physical Society of Japan

JF - Journal of the Physical Society of Japan

IS - 6

M1 - 063706

ER -

Magnetic properties of X-ray irradiated organic mott insulator -(BEDT-TTF)₂Cu[N(CN)₂]Cl

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this